Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

DESCRIPTION TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 950 nm • High reliability • Angle of ha

Infrared Emitting Diode, 950 nm, GaAs

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封装/外壳：径向 包装：散装 描述：EMITTER IR 950NM 150MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared Emitting Diode, 950 nm, GaAs

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Infrared Emitting Diode, 950 nm, GaAs

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Infrared Emitting Diode

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Infrared Emitting Diode, 950 nm, GaAs

Package type: leaded\n Package form: T-1¾\n Dimensions (in mm): Ø 5\n\n ;

Infrared Emitting Diode, 950 nm, GaAs

文件：112.19 Kbytes Page：5 Pages

Infrared Emitting Diode

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

RF dual gain-stage

DESCRIPTION The SA5200 is a dual amplifier with DC to 1200MHz response. Low noise (NF = 3.6dB) makes this part ideal for RF front-ends, and a simple power-down mode saves current for battery operated equipment. Inputs and outputs are matched to 50Ω. The enable pin allows the designer the abilit

High Speed IR Emitting Diode in ø5 mm (T–13/4) Package

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): Ø 5 • Leads with stand-off •

1.55 關m Laser-Diode DIP Module

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High Efficiency LED, 5 mm Tinted Non-Diffused Package

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