GaAs Infrared Emitting Diode in ø 3 mm (T–1) Package

DESCRIPTION TSUS4400 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 18° • Low

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

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Infrared Emitting Diode

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Infrared Emitting Diode, 950 nm, GaAs

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封装/外壳：径向 包装：散装 描述：EMITTER IR 950NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared Emitting Diode, 950 nm, GaAs

Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs

文件：108.49 Kbytes Page：5 Pages

Infrared Emitting Diode

文件：108.64 Kbytes Page：5 Pages

Infrared Emitting Diode, 950 nm, GaAs

文件：113.26 Kbytes Page：5 Pages

封装/外壳：径向，3mm 直径（T-1） 包装：卷带（TR） 描述：EMITTER IR 950NM STD 3MM 光电器件 LED 发射器 - 红外，紫外，可见光

High Output Xenon Flashlamp

Description The new FX-4400 Light Source from PerkinElmer Optoelectronics is a compact, high-output, long-life pulsed xenon flashlamp that offers exceptional arc stability, microsecond pulse durations and a high-intensity continuous line spectrum from the deep UV to the far IR. Features

GaAs/GaAlAs IR Emitting Diode in 짰3 mm (T.1) Package

DESCRIPTION TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant

High Intensity LED in 3 mm Tinted Diffused Package

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Resistor LED for 12 V Supply Voltage

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