TSU8111 Dual SP2T USB 2.0 High Speed Switch with Single Cell Charger

1 Features 1• Dual Single-Pole Double-Throw (SP2T) USB 2.0 High Speed Switch – UART Path Supports either UART or USB 2.0 High Speed Signals • Integrated Single-Cell Charger – Integrated Low Dropout Linear Regulator (LDO) – 1% Charge Voltage Regulation Accuracy – 8% Charge Current

SINGLE CELL CHARGER AND USB SP2T SWITCH SUPPORT USB AND UART

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封装/外壳：20-XFBGA，DSBGA 包装：卷带（TR） 描述：IC PWR SWITCH 1:1 20DSBGA 集成电路（IC） 配电开关，负载驱动器

TSU8111 Dual SP2T USB 2.0 High Speed Switch with Single Cell Charger

1 Features 1• Dual Single-Pole Double-Throw (SP2T) USB 2.0 High Speed Switch – UART Path Supports either UART or USB 2.0 High Speed Signals • Integrated Single-Cell Charger – Integrated Low Dropout Linear Regulator (LDO) – 1% Charge Voltage Regulation Accuracy – 8% Charge Current

260 MHz, 16 x 8 Buffered Video Crosspoint Switches

PRODUCT DESCRIPTION The AD8110 and AD8111 are high speed 16 × 8 video cross-point switch matrices. They offer a –3 dB signal bandwidth greater than 260 MHz, and channel switch times of less than 25 ns with 1 settling. With –78 dB of crosstalk and –97 dB isolation (@ 5 MHz), the AD8110/AD8111 are

8mm VTR Sensor Amplifier

Overview The LB8111V is equipped with built-in amplifiers for use with reel FG, drum FG and drum PG applications to make this IC most suitable for portable VCR (Video Cassette Recorder) applications. Features • Built-in 2-channel reed FG amplifier. • Built-in drum FG amplifier. • Built-i

8mm VTR Sensor Amplifier

Overview The LB8111V is equipped with built-in amplifiers for use with reel FG, drum FG and drum PG applications to make this IC most suitable for portable VCR (Video Cassette Recorder) applications. Features • Built-in 2-channel reed FG amplifier. • Built-in drum FG amplifier. • Built-i

6-Pin DIP Optoisolators Transistor Output(No Base Connection)

6-Pin DIP Optoisolators Transistor Output(No Base Connection) The MOC8111, MOC8112 and MOC8113 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. The internal base–to–Pin 6 connection has been eliminated for improved n

PHOTOTRANSISTOR OPTOCOUPLERS

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