450V, 0.5A, Dual N-Channel Power MOSFET

450V N-Channel Power MOSFET

General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS technology process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand higher energ

450V N-Channel Power MOSFET

文件：459.35 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 1A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conve

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

GOLD BONDED GERMANIUM DIODE

文件：43.2 Kbytes Page：1 Pages

450V N-Channel MOSFET

文件：639.21 Kbytes Page：8 Pages

450V N-Channel MOSFET

文件：667.79 Kbytes Page：8 Pages