iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=170A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

60VN-ChPowerMOSFET

Feature ◇HighSpeedPowerSwitching,LogicLevel ◇EnhancedBodydiodedv/dtcapability ◇EnhancedAvalancheRuggedness ◇100%UISTested,100%RgTested ◇LeadFree,HalogenFree Application ◇SynchronousRectificationinSMPS ◇HardSwitchingandHighSpeedCircuit ◇DC/DCinTe

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=170A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

60VN-ChannelMOSFET

文件：650.39 Kbytes Page：8 Pages

N-ChannelPowerMOSFET

文件：425.46 Kbytes Page：6 Pages