LIGHT-TO-VOLTAGE OPTICAL SENSOR

Description The TSL254R is a light-to-voltage optical sensor combining a photodiode and a transimpedance amplifier (feedback resistor = 1 MΩ) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. The device has improved amplifier

LIGHT-TO-VOLTAGE OPTICAL SENSOR

Description The TSL254R is a light-to-voltage optical sensor combining a photodiode and a transimpedance amplifier (feedback resistor = 1 MΩ) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. The device has improved amplifier

LIGHT-TO-VOLTAGE OPTICAL SENSOR

LIGHT-TO-VOLTAGE OPTICAL SENSOR

Description The TSL254R is a light-to-voltage optical sensor combining a photodiode and a transimpedance amplifier (feedback resistor = 1 MΩ) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. The device has improved amplifier

LIGHT-TO-VOLTAGE OPTICAL SENSOR

Description The TSL254R is a light-to-voltage optical sensor combining a photodiode and a transimpedance amplifier (feedback resistor = 1 MΩ) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the photodiode. The device has improved amplifier

封装/外壳：径向 - 3 引线 包装：卷带（TR） 描述：SENSOR OPT 635NM AMB RADIAL 3PIN 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

封装/外壳：3-SMD，侧视图 包装：卷带（TR） 描述：SENSOR OPT 635NM AMBIENT SMD 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

N-channel enhancement mode vertical D-MOS transistors

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed a

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit