LIGHT-TO-VOLTAGE OPTICAL SENSORS

Description The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2.8 MΩ respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irra

LIGHTTOVOLTAGE OPTICAL SENSORS

[TAOS] Description The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2.8 MΩ respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensi

LIGHT-TO-VOLTAGE OPTICAL SENSORS

Description The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2.8 MΩ respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irra

Fast response and low-noise

The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2.8 MΩ respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irradiance) on the ·Single photodiode and transimpedance architecture\n ·7µs output rise time response\n ·High irradiance responsivity 10.2mV/(µW/cm2) @ λp = 635nm\n ·2X gain lense;

Light-to-Voltage Optical Sensors

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LIGHT-TO-VOLTAGE OPTICAL SENSORS

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LIGHT-TO-VOLTAGE OPTICAL SENSORS

Description The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2.8 MΩ respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irra

LIGHT-TO-VOLTAGE OPTICAL SENSORS

Description The TSL250R, TSL251R, and TSL252R are light-to-voltage optical sensors, each combining a photodiode and a transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2.8 MΩ respectively) on a single monolithic IC. Output voltage is directly proportional to the light intensity (irra

封装/外壳：径向 - 3 引线 包装：卷带（TR） 描述：SENSOR OPT 635NM AMB RADIAL 3PIN 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

封装/外壳：3-SMD，侧视图 包装：卷带（TR） 描述：SENSOR OPT 635NM AMBIENT SMD 传感器，变送器 光学传感器 - 环境光，IR 红外线，UV 紫外线传感器

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

PNP video transistors

DESCRIPTION PNP video transistor in a SOT32 (TO-126) plastic package. NPN complements: BFQ232 and BFQ232A. FEATURES • High breakdown voltages • Low output capacitance • Optimum temperature profile • Excellent reliability properties. APPLICATIONS • Buffer/driver in high-

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000

Square Type

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