GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

Infrared Emitting Diode

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliabilit

Infrared Emitting Diode, 875 nm, GaAlAs

文件：105.78 Kbytes Page：5 Pages

Infrared Emitting Diode, 875 nm, GaAlAs

文件：114.26 Kbytes Page：5 Pages

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

文件：122.99 Kbytes Page：6 Pages

封装/外壳：径向 包装：散装 描述：EMITTER IR 875NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Introduction to Knowles Precision Devices

Applications  RF amplifier  LC Filters and Networks  Broadband Wireless LAN  Medical Devices  Cordless and Cellular phones  DR/Crystal Oscillator  Microstrip line filters

GENERAL PURPOSE SWITCHING OPERATIONAL AMPLIFIER(DUAL INPUT, SINGLE OUTPUT TYPE)

GENERAL PURPOSE SWITCHING OPERATIONAL AMPLIFIER(DUAL INPUT, SINGLE OUTPUT TYPE)

BATTERY CONTACTS FOR MOLDED CASES

文件：457.65 Kbytes Page：1 Pages

PCB Contacts

文件：188.66 Kbytes Page：1 Pages

24 (7/32) AWG Tinned Copper

文件：410.83 Kbytes Page：4 Pages