GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

Infrared Emitting Diode

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

Infrared Emitting Diode, 875 nm, GaAlAs

DESCRIPTION The TSHA520. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm • High reliabilit

封装/外壳：径向 包装：散装 描述：EMITTER IR 875NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared Emitting Diode, 875 nm, GaAlAs

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Infrared Emitting Diode, 875 nm, GaAlAs

文件：114.26 Kbytes Page：5 Pages

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

文件：122.99 Kbytes Page：6 Pages

Infrared Emitting Diode, 875 nm, GaAlAs

Package type: leaded\n Package form: T-1¾\n Dimensions (in mm): Ø 5\n\n ;

Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

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Infrared Emitting Diode, 875 nm, GaAlAs

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Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

RF dual gain-stage

DESCRIPTION The SA5200 is a dual amplifier with DC to 1200MHz response. Low noise (NF = 3.6dB) makes this part ideal for RF front-ends, and a simple power-down mode saves current for battery operated equipment. Inputs and outputs are matched to 50Ω. The enable pin allows the designer the abilit

High Speed IR Emitting Diode in ø5 mm (T–13/4) Package

DESCRIPTION TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1 3/4 • Dimensions (in mm): Ø 5 • Leads with stand-off •

1.55 關m Laser-Diode DIP Module

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High Efficiency LED, 5 mm Tinted Non-Diffused Package

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