Low power, 1.7 MHz, rail-to-rail output, 36 V operational amplifier

Features • Low offset voltage: 1 mV max. @ 25 °C • Low current consumption: 375 μA max. / operator @ 36 V • Wide supply voltage: 2.7 to 36 V • Gain bandwidth product: 1.7 MHz • Unity gain stable • Rail-to-rail output • Input common mode voltage incudes ground • High ESD tolerance: 4 kV HBM

低功耗、1.7MHz、轨到轨输出、36V运算放大器

TSB621、TSB622、TSB624均为通用运算放大器，具有扩展的电源电压工作范围和轨对轨输出。这些器件还实现了出色的速度/功耗比和1.7 MHz增益带宽积，并且每个放大器在36 V的电压下消耗的电流低于375 μA。\n\n TSB621、TSB622和TSB624的工作温度范围宽泛（从-40°C到125°C）且获得相关认证，是工业和汽车应用的理想选择。\n\n 由于封装尺寸较小，TSB621、TSB622和TSB624可以用于板上空间有限的应用。这样可以降低PCB的总体成本。 • 低偏移电压：在25 °C时最高1 mV \n• 宽电源电压：2.7至36 V \n• 单位增益稳定 \n• 输入共模电压包括接地 \n• EMI强化 \n• 汽车认证;

丝印代码：K2K；Low power, 1.7 MHz, rail-to-rail output, 36 V operational amplifier

Features • Low offset voltage: 1 mV max. @ 25 °C • Low current consumption: 375 μA max. / operator @ 36 V • Wide supply voltage: 2.7 to 36 V • Gain bandwidth product: 1.7 MHz • Unity gain stable • Rail-to-rail output • Input common mode voltage incudes ground • High ESD tolerance: 4 kV HBM

丝印代码：K2L；Low power, 1.7 MHz, rail-to-rail output, 36 V operational amplifier

Features • Low offset voltage: 1 mV max. @ 25 °C • Low current consumption: 375 μA max. / operator @ 36 V • Wide supply voltage: 2.7 to 36 V • Gain bandwidth product: 1.7 MHz • Unity gain stable • Rail-to-rail output • Input common mode voltage incudes ground • High ESD tolerance: 4 kV HBM

Silicon Rectifier, General Purpose, High Voltage, Standard Recovery (Surface Mount)

Features: High Temperature Metallurgically Bonded Glass Passivated Junction High Temperature Soldering Guaranteed: +450°C/5 Seconds at Terminals. Complete Device Submersible Temperature of +260°C/10 Seconds in Solder Bath.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.