Precision rail-to-rail input / output 36 V, 22 MHz op-amps

Features • Rail-to-rail input and output • Low offset voltage: 300 μV maximum • Wide supply voltage range: 2.7 V to 36 V • Gain bandwidth product: 22 MHz • Slew rate: 12 V/μs • Low noise: 12 nV/√Hz • Stable with gain +10/-9 • Integrated EMI filter • 2 kV HBM ESD tolerance • Extended temp

Low power, 1.7 MHz, rail-to-rail output, 36 V operational amplifier

Features • Low offset voltage: 1 mV max. @ 25 °C • Low current consumption: 375 μA max. / operator @ 36 V • Wide supply voltage: 2.7 to 36 V • Gain bandwidth product: 1.7 MHz • Unity gain stable • Rail-to-rail output • Input common mode voltage incudes ground • High ESD tolerance: 4 kV HBM

低功耗2.5 Mhz - RR IO - 36 V BiCMOS运算放大器

The TSB572 dual operational amplifier offers extended voltage operating range from 4 V to 36 V and rail-to-rail input/output.\n\n The TSB572 offers a very good speed/power consumption ratio with 2.5 MHz gain bandwidth product while consuming only 380 µA typically at 36 V supply voltage.\n\n Stabilit • Low-power consumption: 380 µA typ \n• Wide supply voltage: 4 V - 36 V \n• Rail-to-rail input and output \n• Gain bandwidth product: 2.5 MHz \n• Low input bias current: 30 nA max \n• No phase reversal• High tolerance to ESD: 4 kV HBM \n• Extended temperature range: -40 °C to 125 °C \n• Automotive g;

Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：2.35459 Mbytes Page：27 Pages

Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：4.08357 Mbytes Page：31 Pages

丝印代码：TSB572I；Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：4.08357 Mbytes Page：31 Pages

丝印代码：K31；Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：4.08357 Mbytes Page：31 Pages

Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：2.35459 Mbytes Page：27 Pages

Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：2.35459 Mbytes Page：27 Pages

丝印代码：K31；Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：4.08357 Mbytes Page：31 Pages

丝印代码：K32；Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：4.08357 Mbytes Page：31 Pages

Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：2.35459 Mbytes Page：27 Pages

丝印代码：K32；Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：4.08357 Mbytes Page：31 Pages

Low-power, 2.5 MHz, RR IO, 36 V BiCMOS operational amplifier

文件：2.35459 Mbytes Page：27 Pages

Silicon Rectifier General Purpose, Fast Recovery

Features: ● Fast Switching ● Low Leakage ● Low Forward Voltage Drop ● High Current Capability ● High Current Surge ● High Reliability

Programmable analog compandor

DESCRIPTION The NE572 is a dual-channel, high-performance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to detect the average value of input signal, a linearized, temperature-compensated variable gain

Programmable analog compandor

DESCRIPTION The NE572 is a dual-channel, high-performance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to detect the average value of input signal, a linearized, temperature-compensated variable gain

N-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING

N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA572T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-70 • Directly driven by 3 V po

N-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING

N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA572T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-70 • Directly driven by 3 V po