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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TSB1184 | LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 |  |   |
TSB1184 | LowVcesatPNPTransistor 文件：314.82 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVce(sat)PNPTransistor Features ●LowVCE(SAT)-0.3V@IC/IB=-2A/-100mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVcesatPNPTransistor 文件：314.82 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVcesatPNPTransistor 文件：314.94 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVcesatPNPTransistor 文件：314.94 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVcesatPNPTransistor 文件：314.94 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
LowVcesatPNPTransistor 文件：314.82 Kbytes Page：4 Pages | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | | | |
Two-Wire,Programmable,Chopper-Stabilized,UnipolarHall-EffectSwitch Description TheA1180,A1181,A1182,andA1183devicesaresensitive,two-wire,unipolar,Halleffectswitches.Theoperatepoint,BOP,canbefield-programmed,afterfinalpackagingofthesensorandplacementintotheapplication.Thisadvancedfeatureallowstheoptimizationofthesensorsw | ALLEGRO Allegro MicroSystems |  | | |
StandardTwo-WireField-ProgrammableChopper-StabilizedUnipolarHall-EffectSwitches FeaturesandBenefits ▪Chopperstabilization ▫Lowswitchpointdriftoveroperating temperaturerange ▫Lowsensitivitytostress ▪Fieldprogrammableforoptimizedswitchpoints ▪On-chipprotection ▫Supplytransientprotection ▫Reverse-batteryprotection ▫On-boardvoltageregulator | ALLEGRO Allegro MicroSystems | | | |
StandardTwo-WireField-ProgrammableChopper-StabilizedUnipolarHall-EffectSwitches TheA1184deviceisastandard,two-wire,unipolar,Halleffectswitches.Theoperatepoint,BOP,canbefield-programmed,afterfinalpackagingofthesensorandplacementintotheapplication.Thisadvancedfeatureallowstheoptimizationofthesensorswitchingperformance,byeffectivelyaccou | ALLEGRO Allegro MicroSystems | | | |
StandardTwo-WireField-ProgrammableChopper-StabilizedUnipolarHall-EffectSwitches TheA1184deviceisastandard,two-wire,unipolar,Halleffectswitches.Theoperatepoint,BOP,canbefield-programmed,afterfinalpackagingofthesensorandplacementintotheapplication.Thisadvancedfeatureallowstheoptimizationofthesensorswitchingperformance,byeffectivelyaccou | ALLEGRO Allegro MicroSystems | | | |
OriginalStrainReliefBushings 文件：112.65 Kbytes Page：1 Pages | HeycoHeyco. 海科 |  | |
TSB1184产品属性
- 类型
描述
- 型号
TSB1184
- 制造商
TSC
- 制造商全称
Taiwan Semiconductor Company, Ltd
- 功能描述
Low Vce(sat) PNP Transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CHINAXYJ |
23+ |
SMD |
9868 |
专做原装正品,假一罚百! |
|||
TI |
23+ |
BGA |
8560 |
受权代理!全新原装现货特价热卖! |
|||
TI |
24+ |
QFP |
30617 |
TI一级代理商原装进口现货 |
|||
TI |
24+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
TI |
QFP |
320 |
正品原装--自家现货-实单可谈 |
||||
TI/德州仪器 |
23+ |
TQFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
TI |
QFP |
5350 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TAIWAN SEMICONDUCTOR |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
TSC |
24+ |
TO252 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
TI/德州仪器 |
22+ |
BGA |
20000 |
原装现货,实单支持 |
TSB1184芯片相关品牌
TSB1184规格书下载地址
TSB1184参数引脚图相关
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DdatasheetPDF页码索引
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