High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 9

Ultrabright LED, Ø 5 mm Untinted Non-Diffused Package

DESCRIPTION The TLCR6200 is a clear, non-diffused 5 mm LED for high end applications where supreme luminous intensity required. These lamps with clear untinted plastic case utilize the highly developed ultrabright AlInGaP (AS). The lens and the viewing angle is optimized to achieve best per

High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero

DESCRIPTION TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 8