nanoSmart짰 Ultra-Low-Power Linear Regulator

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封装/外壳：8-VFDFN 裸露焊盘 包装：卷带（TR） 描述：IC REG LINEAR 0V 200MA 8VDFN 集成电路（IC） 线性 + 开关稳压器

封装/外壳：8-VFDFN 裸露焊盘 包装：卷带（TR） 描述：IC REG LINEAR 1.2V 200MA 8DFN 集成电路（IC） 稳压器 - 线性

IC REG LINEAR 1.2V 200MA 8VDFN

IC REG LINEAR 1.5V 200MA 8VDFN

IC REG LINEAR 1.8V 200MA 8VDFN

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

UB-Suffix Series CMOS Gates

The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of CMOS gates are inverting non−buffered functions.

60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS

High-Current Complementary Silicon Power Transistors . . . designed for use in high–power amplifier and switching circuit applications, • High Current Capability — IC Continuous = 60 Amperes • DC Current Gain — hFE = 15–100 @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage —