中等电流硅整流器

紧凑、高能效硅整流器，适用于需要以下条件的中等电流应用： • High Current Surge - 400 Amperes @ TJ = 175°C\n• Peak Performance @ Elevated Temperature - 25 Amperes\n• Low Cost\n• Compact, Molded Package for Optimum Efficiency in a Small Case ConfigurationMechanical Characteristics:\n• Finish: All External Surfaces are Corrosion Resistant, and Contact Ar;

封装/外壳：Microde 按钮 包装：散装 描述：DIODE GP 250V 25A MICRODE BUTTON 分立半导体产品 二极管 - 整流器 - 单

Medium-Current Silicon Rectifiers

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Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use i