包装：袋 描述：RF ANT 1.9GHZ DOME N FEM PAN MT RF/IF，射频/中频和 RFID RF 天线

天线

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

CSD18503KCS 40V N-Channel NexFET™ Power MOSFET

1 Features • Ultra low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control 3 Description Th

CSD18503KCS 40V N-Channel NexFET™ Power MOSFET

1 Features • Ultra low Qg and Qgd • Low thermal resistance • Avalanche rated • Logic level • Pb free terminal plating • RoHS compliant • Halogen free • TO-220 plastic package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control 3 Description Th

Fiberglass Omnidirectional Wireless Antennas

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40-V, N-Channel NexFET Power MOSFETs

文件：740.03 Kbytes Page：8 Pages