RF AMPLIFIER

Features ■ High Gain: 32.5 dB Typical ■ Low Noise Figure: 2 dB Typical ■ High Output Power: +22 dBm Typical

RF AMPLIFIER MODEL

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Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■Features ●High reverse voltage VR ●Low forward voltage VF ●Fast reverse recovery time trr

RF POWER TRANSISTOR NPN SILICON

NPN SILICON 10 W, 512 MHz RF POWER TRANSISTOR Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 10 W Gain = 8.0 dB (Typ) Efficiency = 65 (T

丝印代码：-9B；Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in small SOT23 plastic SMD packages. The series consists of PLVA650A to PLVA668A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: approximat

HIGH CURRENT STEP-UP CONVERTER WITH BATTERY MONITOR

DESCRIPTION The TK653xx mid power step-down converter is designed for portable battery powered systems, capable of operating from single Li-ion battery cells or two NiCad battery cells. The TK653xx provides the power switch, synchronous rectifier, and the control circuit for a buck step-down conv

NPN SILICON PLANAR(MEDIUM POWER TRANSISTORS)

FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt