Dual 250 mA Output, UltraLow Noise, High PSRR, Low-Dropout Linear Regulator

1FEATURES • Dual 250 mA High-Performance RF LDOs • Available in Fixed and Adjustable Voltage Options (1.2 V to 5.5 V) • High PSRR: 65 dB at 10 kHz • UltraLow Noise: 32 mVrms • Fast Start-Up Time: 60 ms • Stable with 2.2 mF Ceramic Capacitor • Excellent Load/Line Transient Response • Very

封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR） 描述：IC REG LINEAR 2.8V 250MA 10VSON 集成电路（IC） 线性 + 开关稳压器

封装/外壳：10-VFDFN 裸露焊盘 包装：卷带（TR） 描述：IC REG LINEAR 2.8V 250MA 10VSON 集成电路（IC） 稳压器 - 线性

Dual 250 mA Output, UltraLow Noise, High PSRR, Low-Dropout Linear Regulator

文件：964.69 Kbytes Page：21 Pages

Dual 250 mA Output, UltraLow Noise, High PSRR, Low-Dropout Linear Regulator

文件：639.11 Kbytes Page：21 Pages

Dual 250 mA Output, UltraLow Noise, High PSRR, Low-Dropout Linear Regulator

文件：639.11 Kbytes Page：21 Pages

CMOS Static RAM 256K (32K x 8-Bit)

Features ◆ 32K x 8 advanced high-speed CMOS static RAM ◆ Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options ◆ Equal access and cycle times – Commercial: 12ns – Commercial and Industrial: 15/20/25ns ◆ One Chip Select plus one Output Enable pin ◆ Bidirectional data inp

CMOS STATIC RAM 256K (32K x 8-BIT)

DESCRIPTION: The IDT71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high performance, high-reliability CMOS technology. FEATURES: • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.)

CMOS STATIC RAM 256K (32K x 8-BIT)

Description The IDT71256SA is a 262,144-bit high-speed Static RAM organized as 32K x 8. It is fabricated using IDT’s high-perfomance, high-reliability CMOS technology. This state-of-the-art technology, combined with innovative circuit design techniques, provides a cost-effective solution for

CMOS STATIC RAM 256K (32K x 8-BIT)

DESCRIPTION: The IDT71256 is a 262,144-bit high-speed static RAM organized as 32K x 8. It is fabricated using IDT’s high performance, high-reliability CMOS technology. FEATURES: • High-speed address/chip select time — Military: 25/30/35/45/55/70/85/100/120/150ns (max.)

CMOS Static RAM 256K (32K x 8-Bit)

文件：108.14 Kbytes Page：10 Pages