丝印代码：2047B；CURRENT-LIMITED, POWER-DISTRIBUTION SWITCHES

FEATURES · 70-mΩ High-Side MOSFET · 250-mA Continuous Current · Thermal and Short-Circuit Protection · Accurate Current Limit (0.3 A min, 0.7 A max) · Operating Range: 2.7 V to 5.5 V · 0.6-ms Typical Rise Time · Undervoltage Lockout · Deglitched Fault Report (OC) · No OC Glitch During Pow

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

UHF power LDMOS transistor

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

文件：36.03 Kbytes Page：2 Pages