CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

1FEATURES · 80-mΩ High-Side MOSFET Switch · 250 mA Continuous Current Per Channel · Independent Thermal and Short-Circuit Protection With Overcurrent Logic Output · Operating Range: 2.7-V to 5.5-V · CMOS- and TTL-Compatible Enable Inputs · 2.5-ms Typical Rise Time · Undervoltage Lockout ·

CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：478.84 Kbytes Page：31 Pages

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR SWTCH N-CH 1:2/1:1 16SOIC 集成电路（IC） 配电开关，负载驱动器

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR SWTCH N-CH 1:2/1:1 16SOIC 集成电路（IC） 配电开关，负载驱动器

CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：478.84 Kbytes Page：31 Pages

CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES

文件：478.84 Kbytes Page：31 Pages

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside elim

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eli

UHF power transistor

DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output m

UHF power LDMOS transistor

文件：103.84 Kbytes Page：12 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

文件：36.03 Kbytes Page：2 Pages