TRIPLE POWER-DISTRIBUTION SWITCHES

135-mW -Maximum (5-V Input) High-Side MOSFET Switch 500 mA Continuous Current per Channel Short-Circuit and Thermal Protection With Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input 2.5-ms Typical Rise Time Undervoltage Lockout 20 mA Maximum Standby Su

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR SWTCH N-CH 1:2/1:1 16SOIC 集成电路（IC） 配电开关，负载驱动器

TRIPLE POWER-DISTRIBUTION SWITCHES

文件：434.95 Kbytes Page：25 Pages

TRIPLE POWER-DISTRIBUTION SWITCHES

135-mW -Maximum (5-V Input) High-Side MOSFET Switch 500 mA Continuous Current per Channel Short-Circuit and Thermal Protection With Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input 2.5-ms Typical Rise Time Undervoltage Lockout 20 mA Maximum Standby Su

TRIPLE POWER-DISTRIBUTION SWITCHES

135-mW -Maximum (5-V Input) High-Side MOSFET Switch 500 mA Continuous Current per Channel Short-Circuit and Thermal Protection With Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input 2.5-ms Typical Rise Time Undervoltage Lockout 20 mA Maximum Standby Su

TRIPLE POWER-DISTRIBUTION SWITCHES

135-mW -Maximum (5-V Input) High-Side MOSFET Switch 500 mA Continuous Current per Channel Short-Circuit and Thermal Protection With Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input 2.5-ms Typical Rise Time Undervoltage Lockout 20 mA Maximum Standby Su

封装/外壳：16-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR） 描述：IC PWR SWTCH N-CH 1:2/1:1 16SOIC 集成电路（IC） 配电开关，负载驱动器

TRIPLE POWER-DISTRIBUTION SWITCHES

文件：611.2 Kbytes Page：28 Pages

PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

EU Power Cord with IEC Appliance Connector C19, V-Lock, straight

Description - Power Cord, Protection class I, Pin temperature 70 °C, - with V-Lock interlocking system

LED BACKLIGHT FOR LCD DISPLAY

LED BACKLIGHT FOR LCD DISPLAY

UHF power LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

Snap Bushings

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