POWER-DISTRIBUTION SWITCHES

Qualified for Automotive Applications 33-mΩ (5-V Input) High-Side MOSFET Switch Short-Circuit and Thermal Protection Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input Typical Rise Time . . . 6.1 ms Undervoltage Lockout Maximum Standby Supply Current .

POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range: 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time: 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current: 10 μA · No Drain-Source

0.2A loading, 2.7-5.5V, 33mΩ USB power switch, active-high

The TPS203x family of power distribution switches is intended for applications where heavy capacitive loads and short circuits are likely to be encountered. These devices are 50-m N-channel MOSFET high-side power switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V • 33-m (5-V Input) High-Side MOSFET Switch\n• Short-Circuit and Thermal Protection\n• Overcurrent Logic Output\n• Operating Range: 2.7 V to 5.5 V\n• Logic-Level Enable Input\n• Typical Rise Time: 6.1 ms\n• Undervoltage Lockout \n• Maximum Standby Supply Current: 10 µA\n• No Drain-Source Back-Gate Di;

POWER-DISTRIBUTION SWITCHES

文件：376.73 Kbytes Page：23 Pages

POWER DISTRIBUTION SWITCHES

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丝印代码：TPS2030P；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range: 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time: 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current: 10 μA · No Drain-Source

丝印代码：TPS2030P；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range: 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time: 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current: 10 μA · No Drain-Source

丝印代码：2030；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range: 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time: 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current: 10 μA · No Drain-Source

丝印代码：2030；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range: 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time: 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current: 10 μA · No Drain-Source

丝印代码：2030；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range: 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time: 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current: 10 μA · No Drain-Source

丝印代码：2030；POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range: 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time: 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current: 10 μA · No Drain-Source

丝印代码：2030Q1；POWER-DISTRIBUTION SWITCHES

Qualified for Automotive Applications 33-mΩ (5-V Input) High-Side MOSFET Switch Short-Circuit and Thermal Protection Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input Typical Rise Time . . . 6.1 ms Undervoltage Lockout Maximum Standby Supply Current .

丝印代码：2030Q1；POWER-DISTRIBUTION SWITCHES

Qualified for Automotive Applications 33-mΩ (5-V Input) High-Side MOSFET Switch Short-Circuit and Thermal Protection Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input Typical Rise Time . . . 6.1 ms Undervoltage Lockout Maximum Standby Supply Current .

POWER-DISTRIBUTION SWITCHES

Qualified for Automotive Applications 33-mΩ (5-V Input) High-Side MOSFET Switch Short-Circuit and Thermal Protection Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input Typical Rise Time . . . 6.1 ms Undervoltage Lockout Maximum Standby Supply Current .

POWER-DISTRIBUTION SWITCHES

1FEATURES · 33-mΩ (5-V Input) High-Side MOSFET Switch · Short-Circuit and Thermal Protection · Overcurrent Logic Output · Operating Range: 2.7 V to 5.5 V · Logic-Level Enable Input · Typical Rise Time: 6.1 ms · Undervoltage Lockout · Maximum Standby Supply Current: 10 μA · No Drain-Source

Automotive 0.2A loading, 2.7-5.5V, 33mΩ USB power switch, active-high

The TPS203x family of power distribution switches is intended for applications where heavy capacitive loads and short circuits are likely to be encountered. These devices are 50-m N-channel MOSFET high-side power switches. The switch is controlled by a logic enable compatible with 5-V logic and 3-V • Qualified for Automotive Applications\n• 33-m (5-V Input) High-Side MOSFET Switch\n• Short-Circuit and Thermal Protection\n• Overcurrent Logic Output\n• Operating Range . . . 2.7 V to 5.5 V\n• Logic-Level Enable Input\n• Typical Rise Time . . . 6.1 ms\n• Undervoltage Lockout\n• Maximum Standby Sup;

POWER-DISTRIBUTION SWITCHES

Qualified for Automotive Applications 33-mΩ (5-V Input) High-Side MOSFET Switch Short-Circuit and Thermal Protection Overcurrent Logic Output Operating Range . . . 2.7 V to 5.5 V Logic-Level Enable Input Typical Rise Time . . . 6.1 ms Undervoltage Lockout Maximum Standby Supply Current .

POWER-DISTRIBUTION SWITCHES

文件：376.73 Kbytes Page：23 Pages

POWER-DISTRIBUTION SWITCHES

文件：815.93 Kbytes Page：29 Pages

POWER-DISTRIBUTION SWITCHES

文件：815.93 Kbytes Page：29 Pages

POWER-DISTRIBUTION SWITCHES

文件：815.93 Kbytes Page：29 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR SWITCH N-CHAN 1:1 8SOIC 集成电路（IC） 配电开关，负载驱动器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR SWITCH N-CHAN 1:1 8SOIC 集成电路（IC） 配电开关，负载驱动器

POWER-DISTRIBUTION SWITCHES

文件：815.93 Kbytes Page：29 Pages

POWER-DISTRIBUTION SWITCHES

文件：436.61 Kbytes Page：24 Pages

POWER-DISTRIBUTION SWITCHES

文件：436.61 Kbytes Page：24 Pages

POWER-DISTRIBUTION SWITCHES

文件：376.73 Kbytes Page：23 Pages

POWER-DISTRIBUTION SWITCHES

文件：815.93 Kbytes Page：29 Pages

POWER-DISTRIBUTION SWITCHES

文件：815.93 Kbytes Page：29 Pages

POWER-DISTRIBUTION SWITCHES

文件：436.61 Kbytes Page：24 Pages

DECT 500 mW power amplifier

GENERAL DESCRIPTION The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 3.6 V battery supply. When power control is not required, it can be operated without negative supply voltage. FEATURES • Power Amplifier (PA) overall eff

Integrated Circuit High Voltage Segment Driver for Gas Discharge Tubes

Description: The NTE2030 is capable of driving 8 segments of a high voltage display tube with a constant output sink current, which can be adjusted by external program resistor, Rp. The program current is half that of output “ON” current. In the “OFF” state the outputs can tolerate more than 80

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 20.0 Ampere)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, high current capability • High surge capacity. • For

SCHOTTKY BARRIER RECTIFIERS(20A,30-45V)

SWITCHMODE POWER RECTIFIERS D PAK SURFACE MOUNT POWER PACKAGE The D PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage * Low Switching noise * High Surge Capacity * Guara