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位置：首页 > IC中文资料第12427页 > TPN

TPN价格

参考价格：￥707.2857

型号：TPN-100 品牌：Cooper Bussmann 备注：这里有TPN多少钱，2025年最近7天走势，今日出价，今日竞价，TPN批发/采购报价，TPN行情走势销售排行榜，TPN报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TPN

SPST THT Tactile Switches with LED

文件：325.4 Kbytes Page：1 Pages

GREATECS

Createcs

GREATECS
TPN-104A-H01-L2000-I100

Temperature Detection – Insertion Probe

Features ■Insertionprobeforthefoodindustry ■Todeterminetheinternaltemperature duringthecookingprocess ■Temperatureresistantupto300°C ■Plastichandle,suitableforfoodcontact ■ProbedimensionsØ4×100mm ■Pt100sensor,classA,4-wireconnection Functionalprinciple

TURCKTurck Inc.

图尔克德国图尔克集团公司

TURCK
TPN11003NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.0nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=12.6mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancement

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN11006NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.4nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN11006PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.8nC(typ.) (3)Smalloutputcharge:Qoss=14.4nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=8.8mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN1110ENH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=96mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=200V) (5

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN11NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.0nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=12.6mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancement

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN12008QM

Silicon N-channel MOS (U-MOS-H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.5nC(typ.) (3)Smalloutputcharge:Qoss=21.1nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=9.6mΩ(typ.)(VG

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN1200APL

Silicon N-channel MOS (U-MOS??H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=7.5nC(typ.) (3)Smalloutputcharge:Qoss=24nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=9.8mΩ(typ.)(VGS

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN13008NH

MOSFETs Silicon N-channel MOS

Applications •DC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)Small,thinpackage (2)High-speedswitching (3)Smallgatecharge:QSW=6.7nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=10.8mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=1

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN14006NH

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.5nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=11mΩ(typ.) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (5)Enhancement

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN19008QM

Silicon N-channel MOS (U-MOS-H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.5nC(typ.) (3)Smalloutputcharge:Qoss=16.5nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=14.7mΩ(typ.)(V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN1R603PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=11nC(typ.) (3)Smalloutputcharge:Qoss=23nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1.2mΩ(typ.)(VGS=10V)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN2010FNH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=168mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=250V) (

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN2R304PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=10.8nC(typ.) (3)Smalloutputcharge:Qoss=27nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=1.8mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN2R703NL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=3.3mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN2R805PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=12nC(typ.) (3)Smalloutputcharge:Qoss=32nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.2mΩ(typ.)(VGS=10V)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN2R903PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.6nC(typ.) (3)Smalloutputcharge:Qoss=17nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=2.1mΩ(typ.)(VGS=10V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN30008NH

MOSFETs Silicon N-channel MOS

Applications •DC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)Small,thinpackage (2)High-speedswitching (3)Smallgatecharge:QSW=4.1nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=25mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN3021

Tripolar overvoltage protection for network interfaces

Description TheTPN3021isalowcapacitancetransientsurgearrestordesignedforprotectionofhighdebitratecommunicationnetwork.ItslowcapacitanceavoidsdistorsionofthesignalasithasbeendesignedforT1/E1andEthernetnetworks. Features ■Triplecrowbarprotection ■Lowcapaci

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TPN3021

TRIPOLAR OVERVOLTAGE PROTECTION FOR NETWORK INTERFACES

Description TheTPN3021isalowcapacitancetransientsurgearrestordesignedforprotectionofhighdebitratecommunicationnetwork.ItslowcapacitanceavoidsdistorsionofthesignalasithasbeendesignedforT1/E1andEthernetnetworks. Features ■Triplecrowbarprotection ■Lowcapaci

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TPN3021_06

Tripolar overvoltage protection for network interfaces

Description TheTPN3021isalowcapacitancetransientsurgearrestordesignedforprotectionofhighdebitratecommunicationnetwork.ItslowcapacitanceavoidsdistorsionofthesignalasithasbeendesignedforT1/E1andEthernetnetworks. Features ■Triplecrowbarprotection ■Lowcapaci

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TPN3021RL

TRIPOLAR OVERVOLTAGE PROTECTION FOR NETWORK INTERFACES

Description TheTPN3021isalowcapacitancetransientsurgearrestordesignedforprotectionofhighdebitratecommunicationnetwork.ItslowcapacitanceavoidsdistorsionofthesignalasithasbeendesignedforT1/E1andEthernetnetworks. Features ■Triplecrowbarprotection ■Lowcapaci

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TPN3021RL

Tripolar overvoltage protection for network interfaces

Description TheTPN3021isalowcapacitancetransientsurgearrestordesignedforprotectionofhighdebitratecommunicationnetwork.ItslowcapacitanceavoidsdistorsionofthesignalasithasbeendesignedforT1/E1andEthernetnetworks. Features ■Triplecrowbarprotection ■Lowcapaci

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TPN3300ANH

MOSFETs Silicon N-channel MOS

Applications •DC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)Small,thinpackage (2)High-speedswitching (3)Smallgatecharge:QSW=4.5nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=28mΩ(typ.)(VGS=10V) (5)Lowleakagecurrent:IDSS=10

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN3R704PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.1nC(typ.) (3)Smalloutputcharge:Qoss=20.2nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.0mΩ(typ.)(VGS=10

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN4800CQH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=3.3nC(typ.) (3)Smalloutputcharge:Qoss=21nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=39mΩ(typ.)(VGS=10V)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN4R303NL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=3.9nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=5.1mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN4R712MD

MOSFETs Silicon P-Channel MOS

Applications •Lithium-IonSecondaryBatteries •PowerManagementSwitches Features (1)Lowdrain-sourceon-resistance:RDS(ON)=3.8mΩ(typ.)(VGS=-4.5V) (2)Lowleakagecurrent:IDSS=-10μA(max)(VDS=-20V) (3)Enhancementmode:Vth=-0.5to-1.2V(VDS=-10V,ID=-1.0mA)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN4R806PL

MOSFETs Silicon N-channel MOS

Applications •DC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=9.5nC(typ.) (3)Smalloutputcharge:Qoss=24nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.5mΩ(typ.)(VGS=10V) (5)Lowleaka

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN5900CNH

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=2.6nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=50mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=150V) (5

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN5R203PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=5.2nC(typ.) (3)Smalloutputcharge:Qoss=14nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=3.9mΩ(typ.)(VGS=10V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN6R003NL

MOSFETs Silicon N-channel MOS

Applications •SwitchingVoltageRegulators •DC-DCConverters Features (1)High-speedswitching (2)Smallgatecharge:QSW=4.3nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=6.8mΩ(typ.)(VGS=4.5V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (5)Enhancementm

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN6R303NC

MOSFETs Silicon N-channel MOS

Applications •Lithium-IonSecondaryBatteries •PowerManagementSwitches Features (1)Small,thinpackage (2)Lowdrain-sourceon-resistance:RDS(ON)=5.2mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=30V) (4)Enhancementmode:Vth=1.3to2.3V(VDS=10

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN7R006PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.8nC(typ.) (3)Smalloutputcharge:Qoss=20nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=5.4mΩ(typ.)(VGS=10V) (5)Lowleakag

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN7R504PL

MOSFETs Silicon N-channel MOS

Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=6.0nC(typ.) (3)Smalloutputcharge:Qoss=16nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=5.6mΩ(typ.)(VGS=10V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN7R506NH

MOSFETs Silicon N-channel MOS

Applications •DC-DCConverters •SwitchingVoltageRegulators •MotorDrivers Features (1)High-speedswitching (2)Smallgatecharge:QSW=9.2nC(typ.) (3)Lowdrain-sourceon-resistance:RDS(ON)=6.0mΩ(typ.)(VGS=10V) (4)Lowleakagecurrent:IDSS=10μA(max)(VDS=60V) (

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPN8R408QM

Silicon N-channel MOS (U-MOS-H)

1.Applications •High-EfficiencyDC-DCConverters •SwitchingVoltageRegulators •MotorDrivers 2.Features (1)High-speedswitching (2)Smallgatecharge:QSW=8.4nC(typ.) (3)Smalloutputcharge:Qoss=29.9nC(typ.) (4)Lowdrain-sourceon-resistance:RDS(ON)=6.5mΩ(typ.)(VG

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
TPNCE01P30K

P-Channel Enhancement Mode MOSFET

FEATURES ®Vds=-100VID=30A @ROSON=40mO@Ves=-10V

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCE4009S

N-Channel Enhancement Mode Power MOSFET

Application ©Batteryprotection ®Loadswitch

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCE40P40K

P-Channel Enhancement Mode Field Effect Transistor

Application ReverseBatteryprotection »Loadswitch oPowermanagement PWMApplication

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCE40P40K

P-Channel Enhancement Mode Field Effect Transistor

Application ReverseBatteryprotection »Loadswitch oPowermanagement PWMApplication

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCE60P10K

P-Channel Enhancement Mode MOSFET

Application Load/PowerSwitching InterfacingSwitching BatteryManagementforUltraSmallPortable Electronics. LogicLevelShift

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP114

300 mA 25uA Higt PSRR Voltage Regulator

Features «254AGroundCurrentatnoLoad «2%OutputAccuracy «450mAOutputCurrent +10nADisableCurrent(byoption) «WideOperatingInputVoltageRange:1.2Vto 550 «DropoutVoltage:0.32Vat450mA(Vour=3.3V) «SupportFixedOutputVoltage1.2V,15V,1.6V, 1.8V,

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP114ASN120T1G

300 mA 25uA Higt PSRR Voltage Regulator

Features «254AGroundCurrentatnoLoad «2%OutputAccuracy «450mAOutputCurrent +10nADisableCurrent(byoption) «WideOperatingInputVoltageRange:1.2Vto 550 «DropoutVoltage:0.32Vat450mA(Vour=3.3V) «SupportFixedOutputVoltage1.2V,15V,1.6V, 1.8V,

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP114ASN150T1G

300 mA 25uA Higt PSRR Voltage Regulator

Features «254AGroundCurrentatnoLoad «2%OutputAccuracy «450mAOutputCurrent +10nADisableCurrent(byoption) «WideOperatingInputVoltageRange:1.2Vto 550 «DropoutVoltage:0.32Vat450mA(Vour=3.3V) «SupportFixedOutputVoltage1.2V,15V,1.6V, 1.8V,

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP114ASN180T1G

300 mA 25uA Higt PSRR Voltage Regulator

Features «254AGroundCurrentatnoLoad «2%OutputAccuracy «450mAOutputCurrent +10nADisableCurrent(byoption) «WideOperatingInputVoltageRange:1.2Vto 550 «DropoutVoltage:0.32Vat450mA(Vour=3.3V) «SupportFixedOutputVoltage1.2V,15V,1.6V, 1.8V,

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP114ASN300T1G

300 mA 25uA Higt PSRR Voltage Regulator

Features «254AGroundCurrentatnoLoad «2%OutputAccuracy «450mAOutputCurrent +10nADisableCurrent(byoption) «WideOperatingInputVoltageRange:1.2Vto 550 «DropoutVoltage:0.32Vat450mA(Vour=3.3V) «SupportFixedOutputVoltage1.2V,15V,1.6V, 1.8V,

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP114ASN330T1G

300 mA 25uA Higt PSRR Voltage Regulator

Features «254AGroundCurrentatnoLoad «2%OutputAccuracy «450mAOutputCurrent +10nADisableCurrent(byoption) «WideOperatingInputVoltageRange:1.2Vto 550 «DropoutVoltage:0.32Vat450mA(Vour=3.3V) «SupportFixedOutputVoltage1.2V,15V,1.6V, 1.8V,

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP114ASN360T1G

300 mA 25uA Higt PSRR Voltage Regulator

Features «254AGroundCurrentatnoLoad «2%OutputAccuracy «450mAOutputCurrent +10nADisableCurrent(byoption) «WideOperatingInputVoltageRange:1.2Vto 550 «DropoutVoltage:0.32Vat450mA(Vour=3.3V) «SupportFixedOutputVoltage1.2V,15V,1.6V, 1.8V,

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN120T2G

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN120T2G

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN120T2G

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN120T2G

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC
TPNCP115ASN120T2G

With shutdown mode LDO

Features o151ACurrentatnoLoad ®£2%OutputAccuracy ©300mAOutputCurrent CurrentLimitProtection

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

TECHPUBLIC

TPN产品属性

  • 类型

    描述

  • 型号

    TPN

  • 制造商

    GREATECS

  • 制造商全称

    GREATECS

  • 功能描述

    SPST THT Tactile Switches with LED

TPN供应商更多...

更新时间：2025-7-19 18:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市弘扬芯城科技有限公司
TPNUP4201MR6T1G
TECH PUBLIC(台舟)
24+
SOT-23-6
5000
诚信服务,绝对原装原盘。
询价
深圳市汇莱威科技有限公司
TPN8R903NL
TOSHIBA/东芝
24+
DFN3*3
503483
免费送样原盒原包现货一手渠道联系
询价
深圳市恒达亿科技有限公司
TPN6R303NC.LQ(S
TOSHIBA
25+
DFN-33
6000
全新原装现货、诚信经营!
询价
深圳市坤融电子科技有限公司
TPN7R504PL
TOSHIBA/东芝
24+
QFN
540
只做原厂渠道 可追溯货源
询价
深圳市高捷芯城科技有限公司
TPN3021RL
ST(意法半导体)
24+
SOP-8
2669
特价优势库存质量保证稳定供货
询价
深圳市向鸿伟业电子有限公司
TPN11003NL
TOSHIBA/东芝
2402+
QFN
8324
原装正品!实单价优!
询价
深圳市中联芯电子有限公司
TPN11003NL,LQ(S
TOSHIBA
24+
N/A
12000
只做原装 有挂有货 假一罚十
询价
深圳市壹芯创科技有限公司
TPN6R003NL
Toshiba
24+
SOP
12000
公司只做原装正品!现货库存!可随时看货!
询价
上海金庆电子技术有限公司
TPN060058
TECHNITROL
新
79
全新原装 货期两周
询价
深圳市金华微盛电子有限公司
TPN4R203NCL1Q
TOSHIBA/东芝
2019+
DFN33
18000
原厂渠道 可含税出货
询价

TPN芯片相关品牌

  • ATS2
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  • ETAL
  • KG
  • LUMBERG
  • Molex
  • MOLEX11
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  • WEIDMULLER
  • YFWDIODE

TPN规格书下载地址

TPN参数引脚图相关

TPN数据表相关新闻

DdatasheetPDF页码索引

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