Intelligent power device (High side power-MOSFET driver with built-in charge pump)

Feature：VGS monitor\nInput / Output：H/H\nInput / Output (Q1)：H/H\nInput / Output (Q2)：H/H\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Output sink current(DC) IOUT2(+) 0.005 A \nPower Dissipation PD 0.7 W \nJunction temperature Tj 150 ℃ \nOperating Temperature (Max) Topr 125 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nPower Supply Voltage VDD -0.3 to 25 V \nDrain-Source voltage VDSS 25 V ;

1 channel High-Side N channel Power MOSFET Gate Driver

文件：268.05 Kbytes Page：16 Pages

1 channel High-Side N channel Power MOSFET Gate Driver

文件：269.06 Kbytes Page：16 Pages

Integrated Circuit Dual Audio Power Amplifier, 5.5W/Ch (20W BTL)

Description: The NTE7102 is a class B dual audio power amplifier in a 14–Lead DIP type package designed for use in a music center and a radio cassette player. Features: • High Output Power: 20W Typ @ VCC = 18V, RL = 8Ω (BTL) 5.5W/Ch Typ @ VCC = 18V, RL =

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages

C-MOS COMPARATOR WITH C-MOS OUTPUT

文件：128.15 Kbytes Page：4 Pages