Intelligent power device (2-ch High side power-MOSFET driver with built-in charge pump)

Input / Output：H/H\nInput / Output (Q1)：H/H\nInput / Output (Q2)：H/H\nNumber of Circuits：2\nProtection Functions：Overcurrent / Undervoltage\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Power Dissipation PD 0.8 W \nJunction temperature Tj 150 ℃ \nOperating Temperature (Max) Topr 110 ℃ \nOperating Temperature (Min) Topr -40 ℃ \nPower Supply Voltage VDD 30 V \nDrain-Source voltage VDSS 30 V ;

2 channel High-Side N-ch Power MOSFET Gate Driver

文件：269.02 Kbytes Page：9 Pages

Integrated Circuit AF Power Amplifier, 7W

Description: The NTE7101 is an audio power amplifier in an 8–Lead SIP type package designed for use in car radio and car stereo applications. This device features a low thermal resistance providing easy design for 2Ω load circuits and 4Ω load BTL circuits. Features: • High Output Power:

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description TSTS710. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a very high radiant intensity without external optics.     Features • Very high radiant intensity • Suitable for pulse operation • Narrow an

Tiny Low Power Operational Amplifier with Rail-To-Rail Input and Output

文件：853.62 Kbytes Page：18 Pages

LOW-DROPOUT VOLTAGE REGULATORS

文件：541.52 Kbytes Page：33 Pages

LOW-DROPOUT VOLTAGE REGULATORS

文件：541.52 Kbytes Page：33 Pages