TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)

High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications • Small footprint due to small and thin package • High speed switching • Small gate charge : Qg = 17 nC (typ.) • Low drain−source ON resistance : RDS (ON) = 38 mΩ (t

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)

RS-232/422 Low Cap, #24-4pr, FPO, O/A FoilBraid, PVC Jkt, CM, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket.

Low Capacitance for EIA RS-232 and EIA RS-422 Applications

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24 AWG stranded (7x32) TC conductors, Datalene insulation

文件：100.58 Kbytes Page：3 Pages

Gigabit Ethernet Controller

文件：1.18854 Mbytes Page：172 Pages

T1/CEPT ISDN PRI Transformers

文件：84.67 Kbytes Page：1 Pages