丝印代码：9R103NL；MOSFETs Silicon N-channel MOS (U-MOS-H)

Applications • Switching Voltage Regulators • DC-DC Converters Features (1) High-speed switching (2) Small gate charge: QSW = 2.5 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 10.4 mΩ (typ.) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) (5) Enhancement mo

Power MOSFET (N-ch single VDSS 30V)

Application Scope：High efficiency DC/DC converters / Notebook PCs / Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 15 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS 30 V \nGate-Source voltage VGSS +/-20 V ;