P-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high inpu

2.4 GHz EXCITER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2404 is a single–stage class A GaAs amplifier in a low–cost 8 lead plastic package designed to drive the MRFIC2403 power amplifier for use in the 2.4 to 2.5 GHz Industrial–Scientific–Medical (ISM) band. The design is optimized for 5.0 Volt operation at 2.45 GHz but is usable from 2.0 to 3

Silicon Complementary Transistors Darlington, General Purpose

Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications.

FAMILY OF 900-nA/Ch RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH REVERSE BATTERY PROTECTION

文件：391.33 Kbytes Page：23 Pages

FAMILY OF 900-nA/Ch RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH REVERSE BATTERY PROTECTION

文件：391.33 Kbytes Page：23 Pages

FAMILY OF 900-nA/Ch RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH REVERSE BATTERY PROTECTION

文件：391.33 Kbytes Page：23 Pages