封装/外壳：8-DIP（0.300"，7.62mm），7 引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC OFFLINE SWITCH FLYBACK 8DIP 集成电路（IC） AC DC 转换器，离线开关

交流/直流转换器 20W/30W PK 85-264VAC 28W/47W PK (230V AC)

Enhanced EcoSmart, Integrated Off-Line Switcher with Advanced Feature Set and Extended Power Range

Lower System Cost, Higher Design Flexibility • Multi-mode operation maximizes efficiency at all loads • New eSIP-7F and eSIP-7C packages • Low thermal impedance junction-to-case (2 °C per watt) • Low height is ideal for adapters where space is limited • Simple mounting using a clip to aid low

N-channel enhancement mode vertical D-MOS transistors

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown • Low RDSon. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed a

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

P-channel enhancement mode vertical D-MOS transistor

DESCRIPTION P-channel vertical D-MOS transistor in a TO-92 variant envelope and intended for use as a line current interruptor in relay, high-speed and line transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A • Monolithic Construction wit