TOPSwitch-GX Family Extended Power, Design Flexible, EcoSmart, Integrated Off-line Switcher

Description TOPSwitch-GXuses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry on to a single CMOS chip. Many new functions are integrated to reduce system cost and improve design flexibil

TOPSwitch-GX Family Extended Power, Design Flexible, EcoSmart, Integrated Off-line Switcher

Description TOPSwitch-GXuses the same proven topology as TOPSwitch, cost effectively integrating the high voltage power MOSFET, PWM control, fault protection and other control circuitry on to a single CMOS chip. Many new functions are integrated to reduce system cost and improve design flexibil

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics — Output Power = 75 Watts Power Gain = 7.0 dB Min E

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin