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型号 功能描述 生产厂家 企业 LOGO 操作
TO247

CONTROLLING DIMENSION IS MILLIMETER.

文件:50.44 Kbytes Page:1 Pages

AOSMD

万国半导体

TO247

HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches)

文件:39.37 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TO247

Board Mount PPN Heat Sinks

文件:106.39 Kbytes Page:1 Pages

ABL

丝印代码:TO247-4;Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

WOLFSPEED

丝印代码:TO247-3;Silicon Carbide Power MOSFET

文件:858.99 Kbytes Page:11 Pages

CREE

科锐

丝印代码:TO247-4;Silicon Carbide Power MOSFET

文件:1.08429 Mbytes Page:12 Pages

CREE

科锐

HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches)

文件:39.37 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches)

文件:39.37 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PHILIPS

飞利浦

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PHILIPS

飞利浦

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

PHILIPS

飞利浦

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics — Output Power = 75 Watts Power Gain = 7.0 dB Min E

MOTOROLA

摩托罗拉

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin

NTE

TO247产品属性

  • 类型

    描述

  • 型号

    TO247

  • 功能描述

    HEXFET TO-247AC Outline Dimensions are shown in millimeters(inches)

更新时间:2026-5-14 15:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC/ON
23+
原包装原封□□
42500
原装进口特价供应特价,原装元器件供应,支持开发样品更多详细咨询库存
IR
23+
TO252
8000
只做原装现货
24+/25+
0
原装正品现货库存价优
Oasistek
20+
LED
83000
LED原装优势主营型号-可开原型号增税票
IR
22+
TO252
6000
终端可免费供样,支持BOM配单
FAIRCHILD/仙童
23+
TO-263
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择
ST(意法半导体)
25+
SOT-89
10000
QQ询价 绝对原装正品
VISHAY
TO-263
50000

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