CONTROLLING DIMENSION IS MILLIMETER.

文件：50.44 Kbytes Page：1 Pages

HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches)

文件：39.37 Kbytes Page：2 Pages

Board Mount PPN Heat Sinks

文件：106.39 Kbytes Page：1 Pages

丝印代码：TO247-4；Silicon Carbide Power MOSFET C3M TM MOSFET Technology N-Channel Enhancement Mode

Features • C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • Fast intrinsic diode with low reverse recovery (Qrr) •

丝印代码：TO247-3；Silicon Carbide Power MOSFET

文件：858.99 Kbytes Page：11 Pages

丝印代码：TO247-4；Silicon Carbide Power MOSFET

文件：1.08429 Mbytes Page：12 Pages

HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches)

文件：39.37 Kbytes Page：2 Pages

HEXFET TO-247AC Outline Dimensions are shown in millimeters (inches)

文件：39.37 Kbytes Page：2 Pages

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

N-channel silicon junction field-effect transistors

DESCRIPTION General purpose N-channel symmetrical silicon junction field-effect transistors in a plastic TO-92 variant package. FEATURES • Interchangeability of drain and source connections • High IDSSrange • Frequency up to 450 MHz. APPLICATIONS • VHF and UHF amplifiers

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics — Output Power = 75 Watts Power Gain = 7.0 dB Min E

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE247 (NPN) and NTE248 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general–purpose amplifier and low–frequency switching applications. Features: • High DC Current Gain: hFE = 3500 Typ @ IC = 5A • Collector–Emitter Sustainin