TO-3价格
参考价格:¥156.2265
型号:TO-30043-000 品牌:Knowles 备注:这里有TO-3多少钱,2026年最近7天走势,今日出价,今日竞价,TO-3批发/采购报价,TO-3行情走势销售排行榜,TO-3报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TO-3 | Transistor NPN, TO-3 Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications | MULTICOMP 易络盟 | ||
TO-3 | Hermetically Sealed Metal Can Package TO-18 文件:151.45 Kbytes Page:3 Pages | CDIL | ||
TO-3 | Hermetically Sealed Metal Can Package TO-18 | CDIL | ||
丝印代码:TO-3PN;1200V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat | NCEPOWER 新洁能 | |||
丝印代码:TO-3PN;1350V, 15A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;600V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;650V, 15A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;600V, 20A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;600V, 20A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;600V, 20A, Trench FS II General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3PN;1200V, 25A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat | NCEPOWER 新洁能 | |||
丝印代码:TO-3PF;N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications | NCEPOWER 新洁能 | |||
丝印代码:TO-3PF;N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications | NCEPOWER 新洁能 | |||
丝印代码:TO-3PNT;600V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat) ⚫ | NCEPOWER 新洁能 | |||
丝印代码:TO-3PN;1200V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat | NCEPOWER 新洁能 | |||
丝印代码:TO-3PN;1350V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3PF;600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;650V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;600V, 40A, Trench FS II Fast IGBT General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat) ⚫ | NCEPOWER 新洁能 | |||
丝印代码:TO-3PF;600V, 40A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low VCE(sat) | NCEPOWER 新洁能 | |||
丝印代码:TO-3P;1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low VCE(sat) | NCEPOWER 新洁能 | |||
IC compatible Features « IC compatible Compatible with automatic placement equipment « Compatible with infrared and vapor phase reflow soldering process « Full-color type. « Pack in 8 mm tape on 7” diameter reel * RoHS compliant « Moisture sensitivity Level: level 3 | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
IC compatible Features « IC compatible Compatible with automatic placement equipment « Compatible with infrared and vapor phase reflow soldering process « Full-color type. « Pack in 8 mm tape on 7” diameter reel * RoHS compliant « Moisture sensitivity Level: level 3 | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gu | LUGUANG 鲁光电子 | |||
Dual Schottky Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 40 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling | LUGUANG 鲁光电子 | |||
Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free 1wheeling, and | LUGUANG 鲁光电子 | |||
TO-300 文件:45.36 Kbytes Page:2 Pages | VECTRON | |||
包装:散装 描述:MICROPHONE COND ANALOG OMNI 音频设备, 产品 麦克风 | KNOWLES 楼氏电子 | |||
包装:卷带(TR) 描述:MICROPHONE COND ANALOG OMNI 音频设备, 产品 麦克风 | KNOWLES 楼氏电子 | |||
音频麦克风 | KNOWLES 楼氏电子 | |||
咪头/麦克风 | KNOWLES 楼氏电子 | |||
SAW resonator 文件:314.18 Kbytes Page:4 Pages | LUGUANG 鲁光电子 | |||
NPN Silicon Planar Transistor 80Vceo, 500mA Ic 文件:264.72 Kbytes Page:2 Pages | MULTICOMP 易络盟 | |||
Hermetically Sealed Metal Can Package TO-39 文件:213.64 Kbytes Page:3 Pages | CDIL | |||
Fully Isolated Plastic Package 文件:109.09 Kbytes Page:3 Pages | CDIL | |||
PolarHV Power MOSFET 文件:384 Kbytes Page:5 Pages | IXYS 艾赛斯 | |||
Super Fast Rectifiers 文件:299.33 Kbytes Page:2 Pages | LUGUANG 鲁光电子 | |||
Dimensions in inches and 文件:534.94 Kbytes Page:1 Pages | YENYO 元耀科技 | |||
TRANSISTOR SPRING CLIPS 文件:87.76 Kbytes Page:1 Pages | LSTD 莱尔德 | |||
TO-3P BIPOLAR TRANSISTORS 文件:54.22 Kbytes Page:1 Pages | FOSHAN 蓝箭电子 | |||
TO-3PN Non Isolated Leaded Plastic Package 文件:252.08 Kbytes Page:6 Pages | CDIL |
TO-3产品属性
- 类型
描述
- 方向性:
Omnidirectional
- 实际尺寸:
0.1410 inch (3.58 mm)
- 厚度 / 高度:
0.1406 inch (3.57 mm)
- 产品类别:
Audio Microphones
- 制造商:
Knowles
- 产品型号:
TO-30031-000
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OASIS |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
QPL |
25+ |
420 |
公司优势库存 热卖中! |
||||
东西 |
22+ |
TO-3 |
20000 |
华拓芯城用芯经营 |
|||
KNOWLES |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Oasistek |
20+ |
LED |
83000 |
LED原装优势主营型号-可开原型号增税票 |
|||
LX |
26+ |
43600 |
全新原装现货,假一赔十 |
||||
LX |
23+ |
TO-3P2 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
26+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
东西 |
两年内 |
原厂封装 |
100000 |
全新、原装现货 |
|||
TOZAI |
25+ |
NA |
2486 |
专做原装正品,假一罚百! |
TO-3芯片相关品牌
TO-3规格书下载地址
TO-3参数引脚图相关
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- TO-251V
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- TO-23-060
- TO-22-090
- TO-22-080
- TO-22-070
- TO-22-040
- TO-22-030
- TO-207-100E
- TO-207-070E
- TO-207-040H
- TO-205-070E
- TO-204-060H
- TO2-04
- TO-203-100
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DdatasheetPDF页码索引
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