Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

Hermetically Sealed Metal Can Package TO-18

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Hermetically Sealed Metal Can Package TO-18

IC compatible

Features « IC compatible Compatible with automatic placement equipment « Compatible with infrared and vapor phase reflow soldering process « Full-color type. « Pack in 8 mm tape on 7” diameter reel * RoHS compliant « Moisture sensitivity Level: level 3

IC compatible

Features « IC compatible Compatible with automatic placement equipment « Compatible with infrared and vapor phase reflow soldering process « Full-color type. « Pack in 8 mm tape on 7” diameter reel * RoHS compliant « Moisture sensitivity Level: level 3

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gu

Dual Schottky Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 40 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free 1wheeling, and

TO-300

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包装：散装 描述：MICROPHONE COND ANALOG OMNI 音频设备， 产品 麦克风

音频麦克风

包装：卷带（TR） 描述：MICROPHONE COND ANALOG OMNI 音频设备， 产品 麦克风

咪头/麦克风

SAW resonator

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Hermetically Sealed Metal Can Package TO-39

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NPN Silicon Planar Transistor 80Vceo, 500mA Ic

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Fully Isolated Plastic Package

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Dimensions in inches and

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TO-3P BIPOLAR TRANSISTORS

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PolarHV Power MOSFET

文件：384 Kbytes Page：5 Pages

Super Fast Rectifiers

文件：299.33 Kbytes Page：2 Pages

TRANSISTOR SPRING CLIPS

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TO-3PN Non Isolated Leaded Plastic Package

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