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TO-3价格

参考价格:¥156.2265

型号:TO-30043-000 品牌:Knowles 备注:这里有TO-3多少钱,2026年最近7天走势,今日出价,今日竞价,TO-3批发/采购报价,TO-3行情走势销售排行榜,TO-3报价。
型号 功能描述 生产厂家 企业 LOGO 操作
TO-3

Transistor NPN, TO-3

Features: •Power dissipation - Pd = 115W at Tc = 25°C •DC current gain hFE = 20 ~ 70 at Ic = 4A •VCE(Sat) = 1.1V (max.) at Ic = 4A, IB = 400mA •Designed for use in general-purpose amplifier and switching applications

MULTICOMP

易络盟

TO-3

Hermetically Sealed Metal Can Package TO-18

文件:151.45 Kbytes Page:3 Pages

CDIL

TO-3

Hermetically Sealed Metal Can Package TO-18

CDIL

丝印代码:TO-3PN;1200V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

NCEPOWER

新洁能

丝印代码:TO-3PN;1350V, 15A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

NCEPOWER

新洁能

丝印代码:TO-3P;600V, 15A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3P;650V, 15A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3P;600V, 20A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3P;600V, 20A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3P;600V, 20A, Trench FS II

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3PN;1200V, 25A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology offering ⚫ Very low VCE(sat

NCEPOWER

新洁能

丝印代码:TO-3PF;N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

NCEPOWER

新洁能

丝印代码:TO-3PF;N-Channel Enhancement Mode Power MOSFET

General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications

NCEPOWER

新洁能

丝印代码:TO-3PNT;600V, 40A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat) ⚫

NCEPOWER

新洁能

丝印代码:TO-3PN;1200V, 40A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat

NCEPOWER

新洁能

丝印代码:TO-3PN;1350V, 40A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1350V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features ⚫ Trench FSII Technology Offering ⚫ Very low VCE(sat

NCEPOWER

新洁能

丝印代码:TO-3P;600V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3PF;600V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3P;650V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3P;600V, 40A, Trench FS II Fast IGBT

General Description: Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSIIIGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering ⚫ Very low VCE(sat) ⚫

NCEPOWER

新洁能

丝印代码:TO-3PF;600V, 40A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FS II IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

NCEPOWER

新洁能

丝印代码:TO-3P;1200V, 50A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology Offering  Very low VCE(sat)

NCEPOWER

新洁能

IC compatible

Features « IC compatible Compatible with automatic placement equipment « Compatible with infrared and vapor phase reflow soldering process « Full-color type. « Pack in 8 mm tape on 7” diameter reel * RoHS compliant « Moisture sensitivity Level: level 3

ETCList of Unclassifed Manufacturers

未分类制造商

IC compatible

Features « IC compatible Compatible with automatic placement equipment « Compatible with infrared and vapor phase reflow soldering process « Full-color type. « Pack in 8 mm tape on 7” diameter reel * RoHS compliant « Moisture sensitivity Level: level 3

ETCList of Unclassifed Manufacturers

未分类制造商

Schottky Barrier Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

LUGUANG

鲁光电子

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A Features ✧ High surge capacity. ✧ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ✧ Metal silicon junction, majority carrier conduction. ✧ High current capacity, low forward voltage drop. ✧ Gu

LUGUANG

鲁光电子

Dual Schottky Rectifiers

Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection.

LUGUANG

鲁光电子

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 40 A Features Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. High surge capacity. For use in low voltage, high frequency inverters, free wheeling

LUGUANG

鲁光电子

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 60 V CURRENT: 20 A Features ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free 1wheeling, and

LUGUANG

鲁光电子

TO-300

文件:45.36 Kbytes Page:2 Pages

VECTRON

包装:散装 描述:MICROPHONE COND ANALOG OMNI 音频设备, 产品 麦克风

KNOWLES

楼氏电子

包装:卷带(TR) 描述:MICROPHONE COND ANALOG OMNI 音频设备, 产品 麦克风

KNOWLES

楼氏电子

音频麦克风

KNOWLES

楼氏电子

咪头/麦克风

KNOWLES

楼氏电子

SAW resonator

文件:314.18 Kbytes Page:4 Pages

LUGUANG

鲁光电子

NPN Silicon Planar Transistor 80Vceo, 500mA Ic

文件:264.72 Kbytes Page:2 Pages

MULTICOMP

易络盟

Hermetically Sealed Metal Can Package TO-39

文件:213.64 Kbytes Page:3 Pages

CDIL

Fully Isolated Plastic Package

文件:109.09 Kbytes Page:3 Pages

CDIL

PolarHV Power MOSFET

文件:384 Kbytes Page:5 Pages

IXYS

艾赛斯

Super Fast Rectifiers

文件:299.33 Kbytes Page:2 Pages

LUGUANG

鲁光电子

Dimensions in inches and

文件:534.94 Kbytes Page:1 Pages

YENYO

元耀科技

TRANSISTOR SPRING CLIPS

文件:87.76 Kbytes Page:1 Pages

LSTD

莱尔德

TO-3P BIPOLAR TRANSISTORS

文件:54.22 Kbytes Page:1 Pages

FOSHAN

蓝箭电子

TO-3PN Non Isolated Leaded Plastic Package

文件:252.08 Kbytes Page:6 Pages

CDIL

TO-3产品属性

  • 类型

    描述

  • 方向性:

    Omnidirectional

  • 实际尺寸:

    0.1410 inch (3.58 mm)

  • 厚度 / 高度:

    0.1406 inch (3.57 mm)

  • 产品类别:

    Audio Microphones

  • 制造商:

    Knowles

  • 产品型号:

    TO-30031-000

更新时间:2026-8-2 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
OASIS
25+
NA
880000
明嘉莱只做原装正品现货
QPL
25+
420
公司优势库存 热卖中!
东西
22+
TO-3
20000
华拓芯城用芯经营
KNOWLES
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
Oasistek
20+
LED
83000
LED原装优势主营型号-可开原型号增税票
LX
26+
43600
全新原装现货,假一赔十
LX
23+
TO-3P2
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
26+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
东西
两年内
原厂封装
100000
全新、原装现货
TOZAI
25+
NA
2486
专做原装正品,假一罚百!

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