Enhanced, Energy Efficient, Low Power Off-line Switcher

Description TinySwitch-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a b

Enhanced, Energy Effi cient, Low Power Off-line Switcher

Enhanced, Energy Efficient, Low Power Off-line Switcher Description TinySwitch-IIintegrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derive

0-23 W高效率、低成本的解决方案

• 用于短路及开环故障保护的完全集成自动重启动功能 – 节约外部元件成本\r\n• 可编程的线电压欠压检测特性可以防止电源开关在通断电期间出现输出脉冲干扰 – 节省外部元件\r\n• 频率抖动功能极大地降低了电磁干扰 (~10 dB) – 使EMI滤波器元件成本降到最小\r\n• 132 kHz操作频率减小了变压器尺寸 – 允许使用EF12.6或EE13磁芯，从而降低了成本，缩小了电源尺寸\r\n• 即使使用普通的清漆浸渍变压器，内置电路也基本消除了变压器的噪音;

封装/外壳：8-SMD（7 个接脚），鸥翼 包装：管件 描述：IC OFFLINE SWITCH FLYBACK 8SMD 集成电路（IC） AC DC 转换器，离线开关

Enhanced, Energy Efficient, Low Power Off-line Switcher

Description TinySwitch-II integrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derived directly from the voltage on the DRAIN pin, eliminating the need for a b

Enhanced, Energy Effi cient, Low Power Off-line Switcher

Enhanced, Energy Efficient, Low Power Off-line Switcher Description TinySwitch-IIintegrates a 700 V power MOSFET, oscillator, high voltage switched current source, current limit and thermal shutdown circuitry onto a monolithic device. The start-up and operating power are derive

封装/外壳：8-SMD（7 个接脚），鸥翼 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC OFFLINE SWITCH FLYBACK 8SMD 集成电路（IC） AC DC 转换器，离线开关

Silicon Mesa Rectifiers

FEATURES • Glass passivated junction • Hermetically sealed package • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High voltage fast rectification diode

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential require ment, low power lamp and relay drivers and power drivers for high–current applications s

Silicon PIN Photodiode Array

Description S268P is a silicon PIN photodiode array in a inline configuration. Three single photodiode chips with a common cathode are mounted in a waterclear 8 pin dual in line package. Each chip measures 3mm by 3mm and provides a radiant sensitive area of 7.5 mm2. Features • Three pho

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Square Type

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