NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics.

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN DARL 50V 1.2A TO226-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Darlington Transistor

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics.

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：散装 描述：TRANS NPN DARL 50V 1.2A TO226 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High Current Toroid Inductors (with header)

Special Features • Low radiation • High current capacity • High inductance • Mounted on UL 94V-0 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

HELP3E Dual-band Cellular & PCS LTE 3.4 V Linear Power Amplifier Module

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L6725 demoboard realizes in a four layer PCB a step-down DC/DC converter and shows

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RoHS Compliant and Halogen Free

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DirectFET Power MOSFET

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