NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. Sourced from Process 39. See TN6717A for characteristics.

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 100V 1.2A TO226-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长基体（成形引线） 包装：散装 描述：TRANS NPN 100V 1.2A TO226 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 12 (65/30) AWG Tinned Copper 0.093 b) Insulation 0.012 Wall, Nom. MPPE 0.117+/- 0.002 (1) Print ALPHA WIRE ECOWIRE TM 12 AWG E163869-DB RU AWM 11028 105C 600V VW-1 --- CRU AWM I A/B 105C 600V FT1 CE ROHS (2) Color(s) WHITE, BLACK

High Current Toroid Inductors (with header)

Special Features • Low radiation • High current capacity • High inductance • Mounted on UL 94V-0 rated header • Fixed pins for easy PCB insertion • Operating temperature: -55 to +105 °C

N-Channel Enhancement Mode Field Effect Transistor

General Description SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. - RoHS Compliant - Halogen Free Featur

Customer Specification

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Dual Output, 75 Ohm BNC Circuit Board Mount, White Valox Case

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