N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

RF AMPLIFIER MODEL

Features ■ Low Noise Figure: 2.0 dB Typical ■ High Output Power: +24 dBm Typical ■ Operating Temp. - 55 ºC to +85 ºC ■ Environmental Screening Available

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

MOSFET, N-Channel Enhancement-Mode, 250V, 7.0 Ohm

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature Low threshold (2.0V max.) \nHigh input impedance and high gain\nFree from secondary breakdown\nLow CISS and fast switching speeds;

N-Channel Enhancement-Mode Vertical DMOS FET

文件：596.74 Kbytes Page：14 Pages

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input i

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

N-Channel Enhancement-Mode Vertical DMOS FETs

N-Channel Enhancement-Mode Vertical DMOS FET

文件：596.74 Kbytes Page：14 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：596.74 Kbytes Page：14 Pages

N-Channel Enhancement-Mode Vertical DMOS FET

文件：596.74 Kbytes Page：14 Pages

RF AMPLIFIER MODEL

文件：114.79 Kbytes Page：1 Pages

2.5 V to 5.5 V, 115 uA, Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5330/AD5331/AD5340/AD53411 are single 8-/10-/12- bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 115 μA at 3 V and feature a power-down mode that further reduces the current to 80 nA. The devices incorporate an on-chip output buffer that can drive the

2.5 V to 5.5 V, 230uA, Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs

GENERAL DESCRIPTION The AD5332/AD5333/AD5342/AD5343 are dual 8-, 10-, and 12-bit DACs. They operate from a 2.5 V to 5.5 V supply consuming just 230 µA at 3 V, and feature a power-down pin, PD that further reduces the current to 80 nA. These devices incorporate an on-chip output buffer that can dr

2.5 V to 5.5 V, 500 uA, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs

文件：427.29 Kbytes Page：20 Pages

2.5 V to 5.5 V, 500 uA, 2-Wire Interface Quad Voltage Output, 8-/10-/12-Bit DACs

文件：427.29 Kbytes Page：20 Pages