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TN2晶体管资料

  • TN2017别名：TN2017三极管、TN2017晶体管、TN2017晶体三极管

  • TN2017生产厂家：

  • TN2017制作材料：Si-NPN

  • TN2017性质：

  • TN2017封装形式：

  • TN2017极限工作电压：60V

  • TN2017最大电流允许值：0.001A

  • TN2017最大工作频率：<1MHZ或未知

  • TN2017引脚数：

  • TN2017最大耗散功率：2W

  • TN2017放大倍数：

  • TN2017图片代号：NO

  • TN2017vtest：60

  • TN2017htest：999900

  • TN2017atest：0.001

  • TN2017wtest：2

  • TN2017代换 TN2017用什么型号代替：3DK30C,

TN2价格

参考价格：￥1165.5498

型号：TN2 品牌：Emerson 备注：这里有TN2多少钱，2025年最近7天走势，今日出价，今日竞价，TN2批发/采购报价，TN2行情走势销售排行榜，TN2报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TN2

包装：散装 描述：CONN ADAPT PLUG-JCK TRB TWIN/TRI 连接器，互连器件 同轴连接器（RF）适配器

ETC

知名厂家

TN2010H-6FP

High temperature 20 A SCRs

Features Highjunctiontemperature:Tj=150°C HighnoiseimmunitydV/dt=400V/μsupto150°C GatetriggeringcurrentIGT=10mA Peakoff-statevoltageVDRM/VRRM=600V Highturn-oncurrentrisedI/dt=100A/μs ECOPACK®2compliantcomponent TO-220FPABinsulatedpackage:

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN2010H-6G

High temperature 20 A SCRs

Features Highjunctiontemperature:Tj=150°C HighnoiseimmunitydV/dt=400V/μsupto150°C GatetriggeringcurrentIGT=10mA Peakoff-statevoltageVDRM/VRRM=600V HighturnoncurrentrisedI/dt=100A/μs ECOPACK®2compliantcomponent Description Thisdeviceoffe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN2010H-6G-TR

High temperature 20 A SCRs

Features Highjunctiontemperature:Tj=150°C HighnoiseimmunitydV/dt=400V/μsupto150°C GatetriggeringcurrentIGT=10mA Peakoff-statevoltageVDRM/VRRM=600V HighturnoncurrentrisedI/dt=100A/μs ECOPACK®2compliantcomponent Description Thisdeviceoffe

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN2010H-6I

20 A 600 V high temperature SCR thyristors in insulated TO-220

Features •Highjunctiontemperature:Tjmax.=150°C •HighstaticimmunitydV/dt=400V/μsupto150°C •Peakoff-statevoltageVDRM/VRRM=600V •Highturn-oncurrentrisedI/dt=100A/μs •InsulatedpackageTO-220AB: –Insulatedvoltage:2500VRMS –ComplieswithUL1557(Fileref

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN2010H-6T

High temperature 20 A SCRs

Features Highjunctiontemperature:Tj=150°C HighnoiseimmunitydV/dt=400V/μsupto150°C GatetriggeringcurrentIGT=10mA Peakoff-statevoltageVDRM/VRRM=600V HighturnoncurrentrisedI/dt=100A/μs ECOPACK®2compliantcomponent Description Packagedinano

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN2015H-6I

20 A 600 V high temperature SCR thyristors in insulated TO-220

Features •Highjunctiontemperature:Tjmax.=150°C •HighstaticimmunitydV/dt=750V/μsupto150°C •Peakoff-statevoltageVDRM/VRRM=600V •Highturn-oncurrentrisedI/dt=100A/μs •InsulatedpackageTO-220AB: –Insulatedvoltage:2500VRMS –ComplieswithUL1557(Fileref

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN2101

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

SUTEX
TN2101K1

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

SUTEX
TN2101ND

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

SUTEX
TN2106

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

SUTEX
TN2106K1

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

SUTEX
TN2106N3

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

SUTEX
TN2106ND

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped

SUTEX

Supertex, Inc

SUTEX
TN2124

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

SUTEX
TN2124K1

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

SUTEX
TN2124N8

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

SUTEX
TN2-12V

SLIM POLARIZED RELAY

FEATURES •SmallsizeforminimalPCboardmountingrequirements •Smallheaderareamakeshigherdensitymountingpossible •Highsensitivity:140mWnominaloperatingpower(singlesidestable3-12Vtype) •Surgevoltagewithstand:1500VFCCPart68 •Sealedconstructionallows

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

NAIS
TN2130

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

SUTEX
TN2130

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

SUTEX

Supertex, Inc

SUTEX
TN2130

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheTN2130low-threshold,Enhancement-mode (normally-off)transistorusesaverticalDMOSstructure andawell-provensilicon-gatemanufacturingprocess. Thiscombinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimpe

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TN2130_V01

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheTN2130low-threshold,Enhancement-mode (normally-off)transistorusesaverticalDMOSstructure andawell-provensilicon-gatemanufacturingprocess. Thiscombinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimpe

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TN2130K1

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

SUTEX
TN2130K1-G

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

SUTEX

Supertex, Inc

SUTEX
TN2130K1-G

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheTN2130low-threshold,Enhancement-mode (normally-off)transistorusesaverticalDMOSstructure andawell-provensilicon-gatemanufacturingprocess. Thiscombinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimpe

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TN2130K1-GVAO

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription TheTN2130low-threshold,Enhancement-mode (normally-off)transistorusesaverticalDMOSstructure andawell-provensilicon-gatemanufacturingprocess. Thiscombinationproducesadevicewiththepower handlingcapabilitiesofbipolartransistorsandthehigh inputimpe

MicrochipMicrochip Technology

微芯科技微芯科技股份有限公司

Microchip
TN2130ND

N-Channel Enhancement-Mode Vertical DMOS FETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

SUTEX

Supertex, Inc

SUTEX
TN22

STARTLIGHT(Application Specific Discretes A.S.D.??

DESCRIPTION TheTN22hasbeenspecificallydevelopedforuseinelectronicstartercircuits.UseinconjunctionwithasensitiveSCRandaresistor,itprovideshighenergystrikingcharacteristicswithlowtriggeringpower.Thankstoitselectronicconcept,thisTN22basedstarteroffershigh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN22-1200

STARTLIGHT(Application Specific Discretes A.S.D.??

DESCRIPTION TheTN22hasbeenspecificallydevelopedforuseinelectronicstartercircuits.UseinconjunctionwithasensitiveSCRandaresistor,itprovideshighenergystrikingcharacteristicswithlowtriggeringpower.Thankstoitselectronicconcept,thisTN22basedstarteroffershigh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN22-1500

STARTLIGHT(Application Specific Discretes A.S.D.??

DESCRIPTION TheTN22hasbeenspecificallydevelopedforuseinelectronicstartercircuits.UseinconjunctionwithasensitiveSCRandaresistor,itprovideshighenergystrikingcharacteristicswithlowtriggeringpower.Thankstoitselectronicconcept,thisTN22basedstarteroffershigh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN22-1500B

STARTLIGHT(Application Specific Discretes A.S.D.??

DESCRIPTION TheTN22hasbeenspecificallydevelopedforuseinelectronicstartercircuits.UseinconjunctionwithasensitiveSCRandaresistor,itprovideshighenergystrikingcharacteristicswithlowtriggeringpower.Thankstoitselectronicconcept,thisTN22basedstarteroffershigh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN22-1500B-TR

STARTLIGHT(Application Specific Discretes A.S.D.??

DESCRIPTION TheTN22hasbeenspecificallydevelopedforuseinelectronicstartercircuits.UseinconjunctionwithasensitiveSCRandaresistor,itprovideshighenergystrikingcharacteristicswithlowtriggeringpower.Thankstoitselectronicconcept,thisTN22basedstarteroffershigh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN22-1500H

STARTLIGHT(Application Specific Discretes A.S.D.??

DESCRIPTION TheTN22hasbeenspecificallydevelopedforuseinelectronicstartercircuits.UseinconjunctionwithasensitiveSCRandaresistor,itprovideshighenergystrikingcharacteristicswithlowtriggeringpower.Thankstoitselectronicconcept,thisTN22basedstarteroffershigh

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN2219A

NPN General Purpose Amplifier

NPNGeneralPurposeAmplifier Thisdeviceisforuseasamediumpoweramplifierandswitchrequiringcollectorcurrentsupto500mA.SourcedfromProcess19.SeePN2222Aforcharacteristics.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
TN2222A

NPN SILICON PLANAR SWITCHING TRANSISTOR

NPNSILICONPLANARSWITCHINGTRANSISTOR ForuseasaMediumPowerAmplifier TO-237PlasticPackage

CDIL

Continental Device India Limited

CDIL
TN2222A

NPN SILICON PLANAR SWITCHING TRANSISTOR

NPNSILICONPLANARSWITCHINGTRANSISTOR ForuseasaMediumPowerAmplifier TO-237PlasticPackage

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
TN2-24V

SLIM POLARIZED RELAY

FEATURES •SmallsizeforminimalPCboardmountingrequirements •Smallheaderareamakeshigherdensitymountingpossible •Highsensitivity:140mWnominaloperatingpower(singlesidestable3-12Vtype) •Surgevoltagewithstand:1500VFCCPart68 •Sealedconstructionallows

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

NAIS
TN2-3V

SLIM POLARIZED RELAY

FEATURES •SmallsizeforminimalPCboardmountingrequirements •Smallheaderareamakeshigherdensitymountingpossible •Highsensitivity:140mWnominaloperatingpower(singlesidestable3-12Vtype) •Surgevoltagewithstand:1500VFCCPart68 •Sealedconstructionallows

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

NAIS
TN2-4.5V

SLIM POLARIZED RELAY

FEATURES •SmallsizeforminimalPCboardmountingrequirements •Smallheaderareamakeshigherdensitymountingpossible •Highsensitivity:140mWnominaloperatingpower(singlesidestable3-12Vtype) •Surgevoltagewithstand:1500VFCCPart68 •Sealedconstructionallows

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

NAIS
TN2410L

N-Channel 240-V (D-S) MOSFETs

FEATURES ●LowOn-Resistance:3.5Ω ●SecondaryBreakdownFree:260V ●LowPower/VoltageDriven ●LowInputandOutputLeakage ●ExcellentThermalStability BENEFITS ●LowOffsetVoltage ●Full-VoltageOperation ●EasilyDrivenWithoutBuffer ●LowErrorVoltage ●NoHigh-Temperature“

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
TN2425

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2425N8

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2425ND

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2425TG

Low Threshold Dual N-Channel Enhancement-Mode

GeneralDescription TheSupertexTN2425TGisaduallowthresholdenhancementmode(normallyoff)transistorutilizingaverticalDMOSstructureandSupertex’swellprovensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransi

SUTEX

Supertex, Inc

SUTEX
TN2435

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2435N8

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2435NW

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertexswell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2-48V

SLIM POLARIZED RELAY

FEATURES •SmallsizeforminimalPCboardmountingrequirements •Smallheaderareamakeshigherdensitymountingpossible •Highsensitivity:140mWnominaloperatingpower(singlesidestable3-12Vtype) •Surgevoltagewithstand:1500VFCCPart68 •Sealedconstructionallows

NAISNais(Matsushita Electric Works)

松下电器松下电器机电(中国)有限公司

NAIS
TN25

25A SCRs

DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN25

25A SCRs

DESCRIPTION TheTYN/TN25SCRSeriesissuitableforgeneralpurposeapplications. Usingclipassemblytechnology,theyprovideasuperiorperformanceinsurgecurrentcapabilities.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
TN2501

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2501

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

SUTEX

Supertex, Inc

SUTEX
TN2501N8

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2501N8-G

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

SUTEX

Supertex, Inc

SUTEX
TN2501ND

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2504

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2504

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

SUTEX

Supertex, Inc

SUTEX
TN2504N8

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX
TN2504N8-G

N-Channel Enhancement-Mode Vertical DMOS FET

GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputi

SUTEX

Supertex, Inc

SUTEX
TN2504ND

N-Channel Enhancement-Mode Vertical DMOS FETs

LowThresholdDMOSTechnology Theselowthresholdenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththe

SUTEX

Supertex, Inc

SUTEX

TN2产品属性

  • 类型

    描述

  • 型号

    TN2

  • 制造商

    Yageo/Ferroxcube

  • 功能描述

    Ferrite toroid ring core 20mm 3C90

TN2供应商更多...

更新时间：2025-7-19 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
TN2404K
Vishay(威世)
24+
标准封装
7998
原厂直销,大量现货库存,交期快。价格优,支持账期
询价
深圳市金芯世纪电子有限公司
TN2404K-T1-GE3
VISHAY/威世
22+
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
TN2460T-T1
SILICONIX
25+
SOT23
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市明嘉莱科技有限公司
TN2540-600G-TR
ST/意法
24+
NA
860000
明嘉莱只做原装正品现货
询价
深圳市华睿芯科技有限公司
TN2106K1
SUPERTEX
24+
SOT23
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市科恒伟业电子有限公司
TN2-5V
NAIS
2450+
DIP10
8850
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市博科胜电子有限公司
TN2106K1-G
SUPERTEX
22+
SOT23
8900
全新正品现货 有挂就有现货
询价
深圳市威雅利发展有限公司
TN28F010-200
INTEL
08+
PLCC-32
460
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市凌旭科技有限公司
TN20-3H103JT
MITSUBISH
2016+
SMD
8000
只做原装,假一罚十,公司可开17%增值税发票!
询价
芯灿微（深圳）科技有限公司
TN2106K1-G
MICROCHIP/美国微芯
21+
SOT-23(SOT-23-3)
10000
全新原装现货
询价

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