位置：首页 > IC中文资料第1512页 > TN0604N3G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancement-ModeVerticalDMOSFETs Features ❏Lowthreshold—1.6Vmax. ❏Highinputimpedance ❏Lowinputcapacitance—140pFtypical ❏Fastswitchingspeeds ❏Lowonresistance ❏Freefromsecondarybreakdown ❏Lowinputandoutputleakage ❏ComplementaryN-andP-channeldevices Applications ❏Log | SUTEX Supertex, Inc |  |   | |
N-ChannelEnhancement-ModeVerticalDMOSFETs 文件：33.28 Kbytes Page：4 Pages | SUTEX Supertex, Inc | | | |
N-ChannelEnhancement-ModeVerticalDMOSFET 文件：732.24 Kbytes Page：6 Pages | SUTEX Supertex, Inc | | | |
N-ChannelEnhancement-ModeVerticalDMOSFET 文件：647.84 Kbytes Page：5 Pages | SUTEX Supertex, Inc | | | |
P-ChannelEnhancement-ModeVerticalDMOSFETs GeneralDescription Thislowthreshold,enhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinpu | SUTEX Supertex, Inc | | |
TN0604N3G产品属性
- 类型
描述
- 型号
TN0604N3G
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUPERTEX |
24+ |
NA/ |
4038 |
原厂直销,现货供应,账期支持! |
|||
SUPERTEX |
22+ |
TO-92 |
100000 |
代理渠道/只做原装/可含税 |
|||
SUPERTEX |
23+ |
TO-92 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
MICROCHIP/美国微芯 |
24+ |
TO-92(TO-92-3) |
30000 |
原装正品公司现货,假一赔十! |
|||
SUPERTEXINC |
18+ |
TO-92 |
788 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MICROCHIP/微芯 |
25+ |
TO-92-3 |
860000 |
明嘉莱只做原装正品现货 |
|||
MICROCHIP/微芯 |
24+ |
N/A |
5000 |
原装分货 强势渠道 |
|||
MICROCHIP/美国微芯 |
21+ |
TO-92(TO-92-3) |
10000 |
全新原装现货 |
|||
MICROCHIP/美国微芯 |
22+ |
TO-92(TO-92-3) |
15000 |
只有原装,原装,假一罚十 |
|||
SUPERTEK |
0033dc |
397 |
公司优势库存 热卖中!! |
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TN0604N3G规格书下载地址
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