位置：首页 > IC中文资料第302页 > TN0200TS
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TN0200TS | N-Channel 20-V (D-S) MOSFETs 文件：66.09 Kbytes Page：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 |   | |
N-Channel 20 V (D-S) MOSFET 文件：1.05166 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
丝印代码：K2***；Specification Comparison TN0200K vs. TN0200T 文件：32.04 Kbytes Page：1 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Specification Comparison TN0200K vs. TN0200T 文件：32.04 Kbytes Page：1 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
DIAC [FAGOR] • Silicon bi-directional trigger device intended for use in thyristor (SCR and TRIAC) trigger circuits, energy saving lighting circuits and other switching functions. BREAKOVER VOLTAGE 32 V ON-STATE CURRENT 2.0 Amps SPECIAL FEATURES: • Low breakover current. • Excellent symmetry. • | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
SILICON ZENER DIODES 文件：104.04 Kbytes Page：2 Pages | EIC | |
TN0200TS产品属性
- 类型
描述
- 型号
TN0200TS
- 功能描述
MOSFET 20V 1.2A 1W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi/台湾微碧 |
25+ |
SOT-23 |
20000 |
原装 |
|||
VISHAY/威世 |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
VISHAY/威世 |
2025+ |
SOT-23 |
5000 |
原装进口,免费送样品! |
|||
VBsemi/台湾微碧 |
22+ |
SOT-23 |
20000 |
公司只做原装 品质保证 |
|||
VISHAY/威世 |
25+ |
SOT-23 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
VISHAY/威世 |
2511 |
SOT-23 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
VISHAY |
24+ |
5000 |
有部份现货 |
||||
VISHAY/威世 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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TN0200TS规格书下载地址
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DdatasheetPDF页码索引
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