DC/DC Converter TMV Series, 1 Watt

• Industry standard pinout • Unregulated device • I/O isolation voltage 3000 VDC • Operating temperature range –40 °C to +85 °C • Efficiency up to 81 • 3-years product warranty

DC/DC Converter TMV-HI Series, 1 Watt

• Ultra compact SIP-7 package • Very high 5200 VDC I/O-isolation • Unregulated device • Dedicated for IGBT applications • Operating temperature range –40 °C to +95 °C • 3-year product warranty

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For switching/digital circuits ■ Features • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half.