TX09

Description：32-bit microcontroller based on highly functional ARM926EJ-S™ core incorporatingMulti-layer internal bus\nRoHS Compatible Product(s) (#)：Available group name A910 - \nnumber of bits 32 bit \nROM type ROM less - \nRAM size 56 Kbyte \nUSB Device (High Speed) 1 ch \nUART 2 ch \nI2C 2 ch \nSync. Serial Interface 2 ch \nDMA controllers 8 ch \nStatic Memory Controller 4 ch \nDRAM Controller (With Support for SDR SDRAMs and LVCMOS DDR SDRAMs) 1 ch \n;

VHF variable capacitance diode

DESCRIPTION The BB910 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. FEATURES • Excellent linearity • Matched to 2.5 • Hermetically sealed leaded glass SOD68 (DO-34) package • C28: 2.5; ratio:

POWER TRANSISTORS(15A,90W)

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD909 and BD911 are silicon Epitaxial-Base NPN power transistors mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BD910 and BD912 respectively. ■ STMicroelectronics PREFERRED SALESTYPES

UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES • Internal input matching to achieve high power gain

Variable gain RF predriver amplifier

DESCRIPTION The SA910 is a variable gain predriver amplifier designed for handheld analog cellular telephones. When used with a UHF power transistor, it forms a cost-effective, low-profile, surface mount power amplifier solution (1.2W maximum PAE > 50). The SA910 integrates power detection and