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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICONMONOLITHICN-CHANNELSILICONGATEMOS FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  |   | |
SILICONMONOLITHICN-CHANNELSILICONGATEMOS FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SILICONMONOLITHICN-CHANNELSILICONGATEMOS FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SILICONMONOLITHICN-CHANNELSILICONGATEMOS FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SILICONMONOLITHICN-CHANNELSILICONGATEMOS FEATURES -65,536wordsby4bitorganization -Fastaccesstimeandcycletime DEVICETRACICACTRC TMM41464AP/AT/AZ-10100ns50ns190ns TMM41464AP/AT/AZ-12120ns60ns220ns | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
DYNAMICNMOSRAM 65,536x4-BitDynamicNMOSRAM | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 |  | | |
64KX4BITDYNAMICRAMWITHPAGEMODE GENERALDESCRIPTION TheKM41464Aisafullydecoded65,536x4NMOSDynamicRandomAccessMemory.Thedesignisoptimizedforhighspeed,highperformanceapplicationssuchascomputermemory,buffermemory,peripheralstorageandenvironmentswherelowpowerdissipationandcompactlayoutarere | SamsungSamsung semiconductor 三星三星半导体 |  | | |
64KX4BITDYNAMICRAMWITHPAGEMODE GENERALDESCRIPTION TheKM41464Aisafullydecoded65,536x4NMOSDynamicRandomAccessMemory.Thedesignisoptimizedforhighspeed,highperformanceapplicationssuchascomputermemory,buffermemory,peripheralstorageandenvironmentswherelowpowerdissipationandcompactlayoutarere | SamsungSamsung semiconductor 三星三星半导体 | | | |
64KX4BITDYNAMICRAMWITHPAGEMODE GENERALDESCRIPTION TheKM41464Aisafullydecoded65,536x4NMOSDynamicRandomAccessMemory.Thedesignisoptimizedforhighspeed,highperformanceapplicationssuchascomputermemory,buffermemory,peripheralstorageandenvironmentswherelowpowerdissipationandcompactlayoutarere | SamsungSamsung semiconductor 三星三星半导体 | | | |
64KX4BITDYNAMICRAMWITHPAGEMODE GENERALDESCRIPTION TheKM41464Aisafullydecoded65,536x4NMOSDynamicRandomAccessMemory.Thedesignisoptimizedforhighspeed,highperformanceapplicationssuchascomputermemory,buffermemory,peripheralstorageandenvironmentswherelowpowerdissipationandcompactlayoutarere | SamsungSamsung semiconductor 三星三星半导体 | | |
TMM41464产品属性
- 类型
描述
- 型号
TMM41464
- 制造商
Toshiba America Electronic Components
- 功能描述
IC,DRAM,PAGE MODE,64KX4,MOS,DIP,18PIN,PLASTIC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
8529+ |
DIP16 |
104 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Toshiba |
19 |
公司优势库存 热卖中!! |
|||||
TOS |
2016+ |
DIP-16 |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|||
TOS |
25+23+ |
DIP-16 |
37467 |
绝对原装正品全新进口深圳现货 |
|||
TOSHIBA |
22+ |
DIP-18 |
3000 |
原装正品,支持实单 |
|||
TOSHIBA |
88+ |
DIP18P |
13 |
原装现货海量库存欢迎咨询 |
|||
TOSHIBA |
24+ |
DIP |
2700 |
全新原装自家现货优势! |
|||
TOSHIBA |
23+ |
DIP18P |
9526 |
||||
TOSHIBA |
00+ |
ZIP19 |
1835 |
全新原装100真实现货供应 |
|||
TOSHIBA/东芝 |
25+ |
DIP-16 |
65428 |
百分百原装现货 实单必成 |
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TMM41464规格书下载地址
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DdatasheetPDF页码索引
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