TLV916x-Q1Automotive16-V,11-MHz,Rail-to-RailInputorOutput,LowOffsetVoltage,LowNoiseAutomotiveOpAmp

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A (≥2500V) –DeviceCDMESDclassificationlevelC3 (≥1500V) •Lowoffsetvoltage:±210μV •Lowoffsetvoltagedrift:±0.25μV/°C •Lownoise:6

TLV916x-Q1Automotive16-V,11-MHz,Rail-to-RailInputorOutput,LowOffsetVoltage,LowNoiseAutomotiveOpAmp

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A (≥2500V) –DeviceCDMESDclassificationlevelC3 (≥1500V) •Lowoffsetvoltage:±210μV •Lowoffsetvoltagedrift:±0.25μV/°C •Lownoise:6

TLV916x-Q1Automotive16-V,11-MHz,Rail-to-RailInputorOutput,LowOffsetVoltage,LowNoiseAutomotiveOpAmp

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A (≥2500V) –DeviceCDMESDclassificationlevelC3 (≥1500V) •Lowoffsetvoltage:±210μV •Lowoffsetvoltagedrift:±0.25μV/°C •Lownoise:6

TLV916x-Q1Automotive16-V,11-MHz,Rail-to-RailInputorOutput,LowOffsetVoltage,LowNoiseAutomotiveOpAmp

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A (≥2500V) –DeviceCDMESDclassificationlevelC3 (≥1500V) •Lowoffsetvoltage:±210μV •Lowoffsetvoltagedrift:±0.25μV/°C •Lownoise:6

TLV916x16V,11MHz,Rail-to-RailInput/Output,LowOffsetVoltage,LowNoiseOpAmp

1Features •Lowoffsetvoltage:±210μV •Lowoffsetvoltagedrift:±0.25μV/°C •Lownoise:6.8nV/√Hzat1kHz,4.2nV/√Hz broadband •Highcommon-moderejection:110dB •Lowbiascurrent:±10pA •Rail-to-railinputandoutput •MUX-friendly/comparatorinputs –Amplifieroperateswithdiffe

TLV916x-Q1Automotive16V,11MHz,Rail-to-RailInputorOutput,LowOffsetVoltage,LowNoiseAutomotiveOpAmp

1Features •AEC-Q100qualifiedforautomotiveapplications –Temperaturegrade1:–40°Cto+125°C,TA –DeviceHBMESDclassificationlevel3A (≥2500V) –DeviceCDMESDclassificationlevelC3 (≥1500V) •Lowoffsetvoltage:±210μV •Lowoffsetvoltagedrift:±0.25μV/°C •Lownoise:6.8nV