丝印代码：13F6；TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

1 Features 1• Low Noise: 8 nV/√Hz at 1 kHz • 0.1-Hz to 10-Hz Noise: 1.6 μVPP • Quiescent Current: 815 μA (typical) • Low Offset Voltage (typical): – Single and Dual Versions: 40 μV – Quad Version: 50 μV • Gain Bandwidth Product: 5.5 MHz • Rail-to-Rail Input and Output • Single-Supply Oper

丝印代码：13F6；TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

1 Features 1• Low Noise: 8 nV/√Hz at 1 kHz • 0.1-Hz to 10-Hz Noise: 1.6 μVPP • Quiescent Current: 815 μA (typical) • Low Offset Voltage (typical): – Single and Dual Versions: 40 μV – Quad Version: 50 μV • Gain Bandwidth Product: 5.5 MHz • Rail-to-Rail Input and Output • Single-Supply Oper

TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

文件：1.33779 Mbytes Page：34 Pages

丝印代码：13F6；TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

1 Features 1• Low Noise: 8 nV/√Hz at 1 kHz • 0.1-Hz to 10-Hz Noise: 1.6 μVPP • Quiescent Current: 815 μA (typical) • Low Offset Voltage (typical): – Single and Dual Versions: 40 μV – Quad Version: 50 μV • Gain Bandwidth Product: 5.5 MHz • Rail-to-Rail Input and Output • Single-Supply Oper

丝印代码：13F6；TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

1 Features 1• Low Noise: 8 nV/√Hz at 1 kHz • 0.1-Hz to 10-Hz Noise: 1.6 μVPP • Quiescent Current: 815 μA (typical) • Low Offset Voltage (typical): – Single and Dual Versions: 40 μV – Quad Version: 50 μV • Gain Bandwidth Product: 5.5 MHz • Rail-to-Rail Input and Output • Single-Supply Oper

丝印代码：13F6；TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

1 Features 1• Low Noise: 8 nV/√Hz at 1 kHz • 0.1-Hz to 10-Hz Noise: 1.6 μVPP • Quiescent Current: 815 μA (typical) • Low Offset Voltage (typical): – Single and Dual Versions: 40 μV – Quad Version: 50 μV • Gain Bandwidth Product: 5.5 MHz • Rail-to-Rail Input and Output • Single-Supply Oper

丝印代码：13F6；TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

1 Features 1• Low Noise: 8 nV/√Hz at 1 kHz • 0.1-Hz to 10-Hz Noise: 1.6 μVPP • Quiescent Current: 815 μA (typical) • Low Offset Voltage (typical): – Single and Dual Versions: 40 μV – Quad Version: 50 μV • Gain Bandwidth Product: 5.5 MHz • Rail-to-Rail Input and Output • Single-Supply Oper

丝印代码：13F6；TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

1 Features 1• Low Noise: 8 nV/√Hz at 1 kHz • 0.1-Hz to 10-Hz Noise: 1.6 μVPP • Quiescent Current: 815 μA (typical) • Low Offset Voltage (typical): – Single and Dual Versions: 40 μV – Quad Version: 50 μV • Gain Bandwidth Product: 5.5 MHz • Rail-to-Rail Input and Output • Single-Supply Oper

丝印代码：13F6；TLVx376 Low Offset and Drift, Low-Noise, Precision Operational Amplifiers for Cost-Sensitive Systems

1 Features 1• Low Noise: 8 nV/√Hz at 1 kHz • 0.1-Hz to 10-Hz Noise: 1.6 μVPP • Quiescent Current: 815 μA (typical) • Low Offset Voltage (typical): – Single and Dual Versions: 40 μV – Quad Version: 50 μV • Gain Bandwidth Product: 5.5 MHz • Rail-to-Rail Input and Output • Single-Supply Oper

MOSFET N-Ch, Enhancement Mode High Speed Switch

Features: Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements

CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular band. The features of this device include linear gain control, high gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipola

CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER

Product Description The RF2376 is a linear variable gain amplifier suitable for use in TDMA and CDMA systems in the cellular band. The features of this device include linear gain control, high gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipola

IEEE 802.3af PoE POWERED DEVICE CONTROLLERS

文件：433.91 Kbytes Page：21 Pages

Ultra-Mini Dyad

文件：338 Kbytes Page：4 Pages