TOSHIBA LED LAMP

Panel Circuit Indicators • Surface-mount devices • 2.0 (L) × 1.25 (W) × 1.1 (H) mm • InGaAℓP LEDs • Replacing standard-intensity LEDs with high-intensity ones helps increase the brightness or reduce the power consumption of end products. • Colors: red, orange, yellow, pure yellow,

Panel Circuit Indicators

Panel Circuit Indicators • Surface-mount devices • 2.0 (L) × 1.25 (W) × 1.1 (H) mm • InGaAℓP LEDs • Replacing standard-intensity LEDs with high-intensity ones helps increase the brightness or reduce the power consumption of end products. • Colors: red, orange, yellow, pure yellow,

Toshiba TLxE1002A SMT LEDs

Features 2.0 X 1.25 X 1.1 mm (L X W X H) InGaAlP Technology Reflow soldering is possible Standard embossing taping 4 mm pitch : T02 (3000 pcs/reel) Applications Backlight Low−power electronic equipment Personal equipment

Surface-mount LED lamp (2125)

发光色温：Red\n芯片材质：InGaAlP\nRoHS 标准(#)：Available

Panel Circuit Indicator

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Surface-mount LED lamp (2125)

发光色温：Red\n芯片材质：InGaAlP\nRoHS 标准(#)：Available\n

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp