Photocouplers GaA-As Infrared LED and Photo IC

General The TLP701A is a photocoupler in a SDIP6 package that consists of a GaAℓAs infrared light-emitting diode (LED) optically coupled to an integrated high-gain, high-speed photodetector IC chip. The TLP701A is physically smaller than the one in an 8-pin DIP package and compliant with intern

Photocoupler (photo-IC output)

Feature：0.6A peak current\nApplication Scope：Inverter / PV inverter / Induction cooktop\nFunction：IGBT driver\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service No. 5A) / EN 60747-5-5*Download Operating Temperature Topr -40 to 100 ℃ ;

Photocoupler (photo-IC output)

Feature：0.6A peak current / Creepage and clearance 8mm\nApplication Scope：Inverter / PV inverter / Induction cooktop\nFunction：IGBT driver\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service No Operating Temperature Topr -40 to 100 ℃ ;

70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES

Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, hig

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件：264.28 Kbytes Page：9 Pages

LOW-POWER TINY SINGLE C-MOS OPERATIONAL AMPLIFIER?

文件：260.079 Kbytes Page：9 Pages

LOW-POWER DUAL C-MOS OPERATIONAL AMPLIFIER???

文件：264.28 Kbytes Page：9 Pages