Measurement Instruments

Measurement Instruments The TOSHIBA TLP3118 mini-flat photorelay is a small-outline photorelay, suitable for surface-mount assembly. The TLP3118 consists of an infrared emitting diode optically coupled to a photo-MOSFET and is housed in a 4- pin package. Features • 4-pin SOP (2.54SOP4): 2.1 mm

Photorelay (MOSFET output, 1-form-a)

Application Scope：Measurement instrumentation\nNumber of Circuits：1\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本\nSafety Standard：Approved　:　UL 1577 / cUL (CSA Component Acceptance Service No. 5A) / EN 60747-5-5*Download Online Certification of Safety Standard(UL 1577)*Download Onlin ON-state current ION 0.04 A \nOFF-state output terminal voltage VOFF 80 V \nOperating Temperature (Max) Topr 85 ℃ \nOperating Temperature (Min) Topr -20 ℃ \nIsolation voltage BVs@1minute (Min) BVS 1500 Vrms ;

封装/外壳：4-SMD，鸥翼 包装：卷带（TR） 描述：SSR RELAY SPST-NO 40MA 0-80V 继电器 固态继电器

封装/外壳：4-SMD，鸥翼 包装：卷带（TR） 描述：SSR RELAY SPST-NO 40MA 0-80V 继电器 固态继电器

General-purpose dual line amplifier

CD Amplifiers / Low-Frequency , Small-Signal Amplifiers

Marktech Standard 5mm w/Standoffs

FEATURES • Cost Effective • Reliable and Rugged • IC Compatible • With standoffs

Logic level TOPFET

DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin surface mount plastic package. FEATURES • TrenchMOS output stage • Current limiting • Overload protection • Overtemperature protection • Protection latched reset by

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD

3V 1900MHZ LINEAR AMPLIFIER MODULE

Product Description The RF3118 is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CD