丝印代码：7701ME；MICROPOWER SUPPLY VOLTAGE SUPERVISORS

1FEATURES • Power-On Reset Generator • Automatic Reset Generation After Voltage Drop • Precision Voltage Sensor • Temperature-Compensated Voltage Reference • Programmable Delay Time by External Capacitor • Supply Voltage Range . . . 2 V to 6 V • Defined RESET Output from VDD ≥ 1 V • Powe

1 550 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DFB DC-PBH LASER DIODE MODULE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS

DESCRIPTION The NX8563LB Series is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for D-WDM transmission systems in which external modulators are used. FEATURES • Output power Pf = 10 mW MIN. • Wavelength availability λp = 1

1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE

DESCRIPTION The NDL7603P Series is a 1310 nm phase-shifted DFB (distributed feedback) laser diode module with single mode fiber. The Multiple Quantum Well (st-MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over a wide temperature range of -40 to +85°C. It

1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE

DESCRIPTION The NX8562LB is a 1 550 nm laser diode with Polarization Maintain Fiber (PMF). This device is designed as CW light source and ideal for transmission systems in which external modulators are used. FEATURES • Output power Pf = 20 mW MIN. • Wavelength selectable for ITU-T standards

1 550 nm OPTICAL FIBER COMMUNICATIONS EA MODULATOR INTEGRATED MQW-DFB LASER DIODE MODULE FOR 2.5 Gb/s ULTRALONG-REACH APPLICATIONS

DESCRIPTION The NDL7910P is an EA modulator integrated 1 550 nm DFB-LD for 2.5 Gb/s. The newly developed bandgap energy controlled Selective MOVPE technology is utilized as fabrication method. It is designed for 2.5 Gb/s ultralong reach applications. FEATURES • Integrated electroabsorption modu