8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

features 8-Bit Resolution Differential Linearity Error − ±0.3 LSB Typ, ±1 LSB Max (25°C) − ±1 LSB Max Integral Linearity Error − ±0.6 LSB, ±0.75 LSB Max (25°C) − ±1 LSB Max Maximum Conversion Rate of 40 Megasamples Per Second (MSPS) Max Internal Sample and Hold Function 5-V Single Suppl

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

文件：231.63 Kbytes Page：18 Pages

8-Bit Resolution Differential Linearity Error Integral Linearity Error

文件：879.25 Kbytes Page：24 Pages

封装/外壳：24-SOIC（0.209"，5.30mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC ADC 8BIT FLASH 24SO 集成电路（IC） 模数转换器（ADC）

8-BIT HIGH-SPEED ANALOG-TO-DIGITAL CONVERTER

features 8-Bit Resolution Differential Linearity Error − ±0.3 LSB Typ, ±1 LSB Max (25°C) − ±1 LSB Max Integral Linearity Error − ±0.6 LSB, ±0.75 LSB Max (25°C) − ±1 LSB Max Maximum Conversion Rate of 40 Megasamples Per Second (MSPS) Max Internal Sample and Hold Function 5-V Single Suppl

8-Bit Resolution Differential Linearity Error Integral Linearity Error

文件：879.25 Kbytes Page：24 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS=550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS=550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ABLEITSTROM-MESSGER횆TE

文件：1.5571 Mbytes Page：8 Pages