Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power MOSFET (N-ch 500V VDSS 700V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：DTMOSⅡ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Drain current ID 40 A \nPower Dissipation PD 320 W \nDrain-Source voltage VDSS 600 V \nGate-Source voltage VGSS +/-30 V ;

Isc N-Channel MOSFET Transistor

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Switching Voltage Regulators

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Field Effect Transistor Silicon N Channel MOS Type (DTMOS)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.068Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 25 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 600 V) • Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)

POWER MODULES DIODE

Description The B40J../B40C../B40D.. series of B-modules use power diodes in half0bridge configuration. The semiconductors are electrically isolated from the metal base allowing common heatsink and compact assemblies to be built. They can be interconnected to form single or three phase bridges.